Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 104, Issue 3, 2008, Pages

  Ibaez J ^a   Hernandez S ^a   Alarcon Llado E ^a   Cusco R ^a   Artus L ^a   Novikov, S V ^b   Foxon, C T ^b   Calleja, E ^c  

^a INSTITUTE OF EARTH SCIENCES JAUME ALMERA   (Spain)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ARCHITECTURAL ACOUSTICS; CRYSTAL GROWTH; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; INFRARED SPECTROSCOPY; INFRARED TRANSMISSION; MAGNETISM; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON; SPECTRUM ANALYSIS; SUBSTRATES; THICK FILMS; THIN FILMS; ZINC SULFIDE;

ALN LAYERS; ELECTROMAGNETIC THEORIES; FAR INFRA RED; III NITRIDES; INCIDENT RADIATIONS; INFRARED SPECTRA; NITRIDE FILMS; OPTIC PHONONS; RAMAN SIGNALS; SCATTERING MEASUREMENTS; SI SUBSTRATES; SUBSTRATE MATERIALS; TRANSMISSION MINIMA; TRANSVERSE OPTIC; WURTZITE;

MOLECULAR BEAM EPITAXY;

EID: 49749087621     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2968242     Document Type: Article

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