-
1
-
-
0035440209
-
2/Si fluorocarbon plasma etch selectivity
-
Wang S-B and Wendt A E 2001 Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity J. Vac. Sci. Technol. A 19 2425
-
(2001)
J. Vac. Sci. Technol A
, vol.19
, pp. 2425
-
-
Wang, S.B.1
Wendt, A.E.2
-
2
-
-
37149013326
-
Ion energy control at substrates during plasma eching of patterned structures
-
Silapunt R, Wendt A E and Kirmse K H R 2007 Ion energy control at substrates during plasma eching of patterned structures J. Vac. Sci. Technol. B 25 1882
-
(2007)
J. Vac. Sci. Technol B
, vol.25
, pp. 1882
-
-
Silapunt, R.1
Wendt, A.E.2
Kirmse, K.H.R.3
-
3
-
-
67649844004
-
Energy distribution of bombarding ions in plasma etching of dielectrics
-
Buzzi F L, Ting Y-H and Wendt A E 2009 Energy distribution of bombarding ions in plasma etching of dielectrics Plasma Sources Sci. Technol. 18 025009
-
(2009)
Plasma Sources Sci. Technol
, vol.18
, pp. 025009
-
-
Buzzi, F.L.1
Ting, Y.H.2
Wendt, A.E.3
-
4
-
-
0035387580
-
Charaterization of a-phase aluminum oxide films deposited by filtered vacuum arc
-
Yamada-Takamura Y, Koch F, Maier H and Bolt H 2001 Charaterization of a-phase aluminum oxide films deposited by filtered vacuum arc Surf. Coat. Technol. 142-144 260-264
-
(2001)
Surf. Coat. Technol
, vol.142-144
, pp. 260-264
-
-
Yamada, T.Y.1
Koch, F.2
Maier, H.3
Bolt, H.4
-
5
-
-
43049095369
-
Pulsed-bias magnetron sputtering of non-conductive crystalline chromia films at low substrate temperature
-
Audronis M, Matthews A and Leyland A 2008 Pulsed-bias magnetron sputtering of non-conductive crystalline chromia films at low substrate temperature J. Phys. D: Appl. Phys. 41 035309
-
(2008)
J. Phys. D. Appl. Phys.
, vol.41
, pp. 035309
-
-
Audronis, M.1
Matthews, A.2
Leyland, A.3
-
6
-
-
0036565064
-
Ion energy distributions at rf-biased wafer surfaces
-
Woodworth J R, Abraham I C, Riley M E, Miller P A, Hamilton TW, Aragon B P, Shul R J and Willison C G 2002 Ion energy distributions at rf-biased wafer surfaces J. Vac. Sci. Technol. A 20 873-886
-
(2002)
J. Vac. Sci. Technol A
, vol.20
, pp. 873-886
-
-
Woodworth, J.R.1
Abraham, I.C.2
Riley, M.E.3
Miller, P.A.4
Hamilton, T.W.5
Aragon, B.P.6
Shul, R.J.7
Willison, C.G.8
-
7
-
-
0001471861
-
Ion energy measurement at the powered electrode in an rf discharge
-
Kuypers A D and Hopman H J 1988 Ion energy measurement at the powered electrode in an rf discharge J. Appl. Phys. 63 1894-1898
-
(1988)
J. Appl. Phys.
, vol.63
, pp. 1894-1898
-
-
Kuypers, A.D.1
Hopman, H.J.2
-
8
-
-
34548625667
-
Measurement of ion impact energy and ion flux at the rf electrode of a parallel plate reactive ion etcher
-
Manenschijn A, Janssen G C A M, van der Drift E and Radelaar S 1991 Measurement of ion impact energy and ion flux at the rf electrode of a parallel plate reactive ion etcher J. Appl. Phys. 69 1253-1262
-
(1991)
J. Appl. Phys.
, vol.69
, pp. 1253-1262
-
-
Manenschijn, A.1
Janssen, G.C.A.M.2
Van, D.D.E.3
Radelaar, S.4
-
9
-
-
0032620456
-
Compact floating ion energy analyzer for measuring energy distributions of ions bombarding radio-frequency biased electrode surfaces
-
Edelberg E A, Perry A, Benjamin N and Aydil E S 1999 Compact floating ion energy analyzer for measuring energy distributions of ions bombarding radio-frequency biased electrode surfaces Rev. Sci. Instrum. 70 2689-2698
-
(1999)
Rev. Sci. Instrum
, vol.70
, pp. 2689-2698
-
-
Edelberg, E.A.1
Perry, A.2
Benjamin, N.3
Aydil, E.S.4
-
10
-
-
18644385998
-
Measured energy distributions of ions driven by an asymmetrically pulsed bias during magnetron sputtering
-
Barnat E V and Lu T-M 2002 Measured energy distributions of ions driven by an asymmetrically pulsed bias during magnetron sputtering J. Appl. Phys. 92 2984-2989
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 2984-2989
-
-
Barnat, E.V.1
Lu, T.M.2
-
11
-
-
41549090909
-
Retarding field analyzer for ion energy distribution measurements at a radio-frequency biased electrode
-
Gahan D, Dolinaj B and Hopkins M B 2008 Retarding field analyzer for ion energy distribution measurements at a radio-frequency biased electrode Rev. Sci. Instrum. 79 033502
-
(2008)
Rev. Sci. Instrum
, vol.79
, pp. 033502
-
-
Gahan, D.1
Dolinaj, B.2
Hopkins, M.B.3
-
12
-
-
21144474078
-
+ ions at the radio-frequency-powered electrode in reactive ion etching
-
Janes J and Huth C 1992 Energy-resolved angular distributions of O+ ions at the radio-frequency-powered electrode in reactive ion etching J. Vac. Sci. Technol. A 10 3086-3091
-
(1992)
J. Vac. Sci. Technol A
, vol.10
, pp. 3086-3091
-
-
Janes, J.1
Huth, C.2
-
13
-
-
0036747662
-
Ion energy distributions versus frequency and ion mass at the rf-biased electrode in an inductively driven discharge
-
Abraham I C, Woodworth J R, Riley M E, Miller P A, Hamilton T W and Aragon B P 2002 Ion energy distributions versus frequency and ion mass at the rf-biased electrode in an inductively driven discharge J. Vac. Sci. Technol. A 20 1759-1768
-
(2002)
J. Vac. Sci. Technol A
, vol.20
, pp. 1759-1768
-
-
Abraham, I.C.1
Woodworth, J.R.2
Riley, M.E.3
Miller, P.A.4
Hamilton, T.W.5
Aragon, B.P.6
-
14
-
-
0039436897
-
Hybrid model for the calculation of ion distribution functions behind a direct current or radio frequency driven plasma boundary sheath
-
DOI 10.1063/1.1389081
-
Kratzer M, Brinkmann R P, Sabisch W and Schmidt H 2001 Hybrid model for the calculation of ion distribution functions behind a direct current or radio frequency driven plasma boundary sheath J. Appl. Phys. 90 2169-2179 (Pubitemid 33600623)
-
(2001)
Journal of Applied Physics
, vol.90
, Issue.5
, pp. 2169-2179
-
-
Kratzer, M.1
Brinkmann, R.P.2
Sabisch, W.3
Schmidt, H.4
-
15
-
-
0008284330
-
Modeling of the sheath and the energy distribution of ions bombarding rf-biased substrates in high density plasma reactors and comparsion to experimental measurements
-
Edelberg E A and Aydil E S 1999 Modeling of the sheath and the energy distribution of ions bombarding rf-biased substrates in high density plasma reactors and comparsion to experimental measurements J. Appl. Phys. 86 4799
-
(1999)
J. Appl. Phys.
, vol.86
, pp. 4799
-
-
Edelberg, E.A.1
Aydil, E.S.2
-
18
-
-
0001530983
-
Control of ion energy distribution at substrates during plasma processing
-
Wang S and Wendt A 2000 Control of ion energy distribution at substrates during plasma processing J. Appl. Phys. 88 643-646
-
(2000)
J. Appl. Phys
, vol.88
, pp. 643-646
-
-
Wang, S.1
Wendt, A.2
-
19
-
-
0034315704
-
Control of the radio-frequency wave form at the chuck of an industrial oxide-etch reactor
-
Berry L, Maynard H, Miller P, Moore T, Pendley M, Resta V, Sparks D and Yang Q 2000 Control of the radio-frequency wave form at the chuck of an industrial oxide-etch reactor J. Vac. Sci. Technol. A 18 2806-2814
-
(2000)
J. Vac. Sci. Technol A
, vol.18
, pp. 2806-2814
-
-
Berry, L.1
Maynard, H.2
Miller, P.3
Moore, T.4
Pendley, M.5
Resta, V.6
Sparks, D.7
Yang, Q.8
-
20
-
-
34247487447
-
Arbitray substrate voltage wave forms for manipulating energy distribution of bombarding ions during plasma processing
-
Patterson M M, Chu H-Y and Wendt A E 2007 Arbitray substrate voltage wave forms for manipulating energy distribution of bombarding ions during plasma processing Plasma Sources Sci. Technol. 16 257
-
(2007)
Plasma Sources Sci. Technol
, vol.16
, pp. 257
-
-
Patterson, M.M.1
Chu, H.Y.2
Wendt, A.E.3
-
21
-
-
0001630391
-
Effect of bias voltage waveform on ion energy distribution
-
Rauf S 2000 Effect of bias voltage waveform on ion energy distribution J. Appl. Phys. 87 7647-7651
-
(2000)
J. Appl. Phys.
, vol.87
, pp. 7647-7651
-
-
Rauf, S.1
-
22
-
-
31144448089
-
Effect of nonsinusoidal bias waveforms on ion energy distributions and fluorocarbon plasma etch selectivity
-
Agarwal A and Kushner M J 2005 Effect of nonsinusoidal bias waveforms on ion energy distributions and fluorocarbon plasma etch selectivity J. Vac. Sci. Technol. A 23 1440-1449
-
(2005)
J. Vac. Sci. Technol A
, vol.23
, pp. 1440-1449
-
-
Agarwal, A.1
Kushner, M.J.2
-
23
-
-
76649139468
-
Calibration of a miniaturized retarding field analyzer for low-temperature plasmas:Geometrical transparency and collisional effects
-
Baloniak T, Reuter R, Flötgen C and von Keudell A 2010 Calibration of a miniaturized retarding field analyzer for low-temperature plasmas: geometrical transparency and collisional effects J. Phys. D: Appl. Phys. 43 055203
-
(2010)
J. Phys.D: Appl. Phys.
, vol.43
, pp. 055203
-
-
Baloniak, T.1
Reuter, R.2
Flötgen, C.3
Von, K.A.4
-
24
-
-
27844517606
-
Retarding-field analyzer for measurements of ion energy distributions and secondary electron emission coefficients in low-pressure radio frequency discharges
-
Böhm C and Perrin J 1993 Retarding-field analyzer for measurements of ion energy distributions and secondary electron emission coefficients in low-pressure radio frequency discharges Rev. Sci. Instrum. 64 31
-
(1993)
Rev. Sci. Instrum
, vol.64
, pp. 31
-
-
Böhm, C.1
Perrin, J.2
-
25
-
-
0033445241
-
Energy distribution of ions bombarding biased electrodes in high density plasma reactors
-
Edelberg E, Perry A, Benjamin N and Aydil E 1999 Energy distribution of ions bombarding biased electrodes in high density plasma reactors J. Vac. Sci. Technol. A 17 506
-
(1999)
J. Vac. Sci. Technol A
, vol.17
, pp. 506
-
-
Edelberg, E.1
Perry, A.2
Benjamin, N.3
Aydil, E.4
-
26
-
-
36149006272
-
Ion energies at the cathode of a glow discharge
-
Davis W D and Vanderslice T A 1963 Ion energies at the cathode of a glow discharge Phys. Rev. 131 219-230
-
(1963)
Phys. Rev.
, vol.131
, pp. 219-230
-
-
Davis, W.D.1
Vanderslice, T.A.2
-
27
-
-
0043047163
-
High-resolution submicron retarding field analyzer for low-temperature plasma analysis
-
Blain M G, Stevens J E and Woodworth J R 1999 High-resolution submicron retarding field analyzer for low-temperature plasma analysis Appl. Phys. Lett. 75 3923-3925
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 3923-3925
-
-
Blain, M.G.1
Stevens, J.E.2
Woodworth, J.R.3
-
29
-
-
0000065291
-
Measurement of ion energy distributions at the powered rf electrode in a variable magnetic field
-
Kuypers A D and Hopman H J 1990 Measurement of ion energy distributions at the powered rf electrode in a variable magnetic field J. Appl. Phys. 67 1229-1240
-
(1990)
J. Appl. Phys.
, vol.67
, pp. 1229-1240
-
-
Kuypers, A.D.1
Hopman, H.J.2
|