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Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

Studies on metal/ n-GaAs Schottky barrier diodes: The effects of temperature and carrier concentrations

(2) Mangal, Sutanu a Banerji, P a

a INDIAN INSTITUTE OF TECHNOLOGY (India)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE-VOLTAGE MEASUREMENTS; DEPLETION REGIONS; DIODE PARAMETERS; EFFECT OF TEMPERATURES; EFFECTS OF TEMPERATURES; FORWARD-BIAS VOLTAGES; GAAS; HORIZONTAL REACTORS; IDEALITY FACTORS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; MOCVD; N-TYPE DOPING; PHOTOVOLTAIC DEVICES; RATE OF CHANGES; ROOM TEMPERATURES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SEMI-INSULATING GAAS; TEMPERATURE RANGES; THERMAL EVAPORATION TECHNIQUES; TRIMETHYL GALLIUMS;

ATMOSPHERIC PRESSURE; BIOACTIVITY; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DIODES; ELECTRIC CONDUCTIVITY; EPITAXIAL LAYERS; GALLIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PALLADIUM; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; TEMPERATURE; THERMAL EFFECTS; THERMAL EVAPORATION; VAPORS; VOLTAGE MEASUREMENT; ZINC;

SCHOTTKY BARRIER DIODES;

EID: 65449147000 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3110065 Document Type: Article

Times cited : (11)

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