Electrical characterization of MOS structures with deposited oxides annealed in N2O or NO

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 521-524

  Grieb, M ^a   Noborio, M ^b   Peters, D ^c   Bauer, A J ^a   Friedrichs, P ^c   Kimoto, T ^b   Ryssel, H ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b KYOTO UNIVERSITY   (Japan)

^c SiCED Electronics Development GmbH and Co KG   (Germany)

Author keywords

(0001); 4H SiC; Constant current stress (CCS); Deposited oxide; Oxide breakdown; Reliability; Si face; Time dependent dielectric breakdown (TBBD)

Indexed keywords

DIELECTRIC MATERIALS; MOS DEVICES; RELIABILITY; SILICON CARBIDE;

(0001); 4H-SIC; CONSTANT CURRENT STRESS; DEPOSITED OXIDES; OXIDE BREAKDOWN; SI FACES; TIME DEPENDENT DIELECTRIC BREAKDOWN;

ANNEALING;

EID: 69749127228     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.521     Document Type: Conference Paper

References (5)

1. L. A. Lipkin, M. K. Das and J. W. Palmour: Mater. Sci. Forum Vols. 389-393 (2002), p. 985 doi:10.4028/www.scientific.net/MSF.389-393.985.
2. K. Fujihira, S. Yoshida, N. Miura, Y. Nakao, M. Imaizumi, T. Takami and T. Oomori: presented at ICSCRM 2007 (We-3A-4).
3. T. Kimoto, H. Kawano, M. Noborio, J. Suda, and H. Matsunami: Mater. Sci. Forum Vols. 527-529 (2006), p. 987 doi:10.4028/www.scientific.net/MSF.527-529. 987.
4. K. Fujihira, N. Miura, K. Shiozawa, M. Imaizumi, K.Ohtsuka, and T. Takami: IEEE Electron Device Letters Vol. 25 (2004), p. 734 doi:10.1109/LED. 2004.837533.
5. W. Weibull: J. Appl. Phys. Vol. 18 (1951), p. 293.