Ta2Si thermal oxidation: A simple route to a high-k gate dielectric on 4H-SiC

Electrochemical and Solid-State Letters

Volumn 7, Issue 12, 2004, Pages

  Perez Tomas A ^a   Godignon, P ^a   Montserrat, J ^a   Millan J ^a   Mestres, N ^b   Vennegues, P ^c   Stoemenos, J ^d  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^c CRHEA CNRS   (France)

^d ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; GATES (TRANSISTOR); MOSFET DEVICES; PHASE DIAGRAMS; SURFACE ROUGHNESS; THERMAL EFFECTS; THERMOOXIDATION;

ELECTRICAL INTERFACIAL CHARACTERISTICS; GATE DIELECTRICS; INSULATOR LAYERS; THERMAL OXIDATION;

DIELECTRIC MATERIALS;

EID: 11144328852     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1819852     Document Type: Article

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