Anomalous tunneling in carbon/alkane/TiO 2/gold molecular electronic junctions: Energy level alignment at the metal/semiconductor interface

ACS Applied Materials and Interfaces

Volumn 1, Issue 2, 2009, Pages 443-451

  Yan, Haijun ^a,b   McCreery, Richard L ^b,c  

^a OHIO STATE UNIVERSITY   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c UNIVERSITY OF ALBERTA   (Canada)

Author keywords

electron transport; injection barrier; molecular electronics; monolayer; titanium dioxide; tunneling; work function

Indexed keywords

ANOMALOUS EFFECTS; APPLIED POTENTIALS; CURRENT INCREASE; ELECTRON TRANSPORT; ELECTRON-INJECTION BARRIER; ELECTRONIC BEHAVIORS; ELECTRONIC JUNCTIONS; ENERGY LEVEL ALIGNMENT; GOLD JUNCTIONS; INJECTION BARRIER; INJECTION BARRIERS; INSERTION LAYERS; KELVIN PROBE MEASUREMENTS; LOW DIELECTRIC CONSTANTS; METAL/SEMICONDUCTOR INTERFACE; MOLECULAR ELECTRONIC JUNCTION; MOLECULAR LAYER; NANOMETER-THICK FILMS; NEGATIVE BIAS; POSITIVE BIAS; PYROLYZED PHOTORESIST FILMS; SURFACE DIPOLE; TIO; TOP CONTACT; TUNNELING;

ALIGNMENT; CONDUCTION BANDS; ELECTROCHEMICAL ELECTRODES; ELECTRON MOBILITY; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; GOLD; MOLECULAR ELECTRONICS; MONOLAYERS; OXIDES; PARAFFINS; PHOTORESISTS; PYROLYSIS; SILICON COMPOUNDS; THICK FILMS; TITANIUM; TITANIUM DIOXIDE; WORK FUNCTION;

SURFACES;

EID: 77956435614     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am800126v     Document Type: Article

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