SCOPUS 정보 검색 플랫폼

Volumn 69, Issue 5, 1996, Pages 599-601

Enhanced quantum efficiency in polymer electroluminescence devices by inserting a tunneling barrier formed by Langmuir-Blodgett films

(3) Kim, Young Eun a Park, Heuk a Kim, Jang Joo a

a Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRODES; ELECTRON TUNNELING; LANGMUIR BLODGETT FILMS; MATHEMATICAL MODELS; MONOLAYERS; POLYMETHYL METHACRYLATES; QUANTUM EFFICIENCY;

ELECTRON INJECTION; ENERGY BAND MODEL; ENERGY BAND OFFSET; HOLE INJECTION; POLYMETHOXY ETHYLHEXYLOXY PHENYLENE VINYLENE; TUNNELING BARRIER;

LUMINESCENT DEVICES;

EID: 0030192078 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.117919 Document Type: Article

Times cited : (206)

References (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.