On the lateral resolution of scanning capacitance microscope based C-V measurements

Ultramicroscopy

Volumn 110, Issue 10, 2010, Pages 1343-1348

  Lanyi S ^a  

^a INSTITUTE OF PHYSICS   (Slovakia)

Author keywords

Computer simulation; Dopant profiling; Finite element method; Scanning capacitance microscope; Stray field

Indexed keywords

C-V MEASUREMENT; CALIBRATION ACCURACY; CANTILEVER PROBE; CONDUCTING SURFACES; DEEP DEPLETION; DEPLETION DEPTHS; DOPANT CONCENTRATIONS; DOPANT PROFILING; DOPED MATERIALS; DOPING LEVELS; ELECTROSTATIC FIELD; FINITE ELEMENT; HIGH-FREQUENCY C-V; LATERAL RESOLUTION; ORDERS OF MAGNITUDE; RADIUS OF CURVATURE; SCANNING CAPACITANCE; SCANNING CAPACITANCE MICROSCOPE; SEMI-CONDUCTOR SURFACES; STRAY CAPACITANCES; STRAY FIELD; TEST STRUCTURE; THIN WIRES;

ATOMIC FORCE MICROSCOPY; CAPACITANCE; COMPUTATIONAL METHODS; COMPUTER SIMULATION; MICROSCOPES; NANOCANTILEVERS; PROBES; SCANNING; SEMICONDUCTOR DOPING; SURFACES; WIRE;

FINITE ELEMENT METHOD;

ACCURACY; ARTICLE; CALIBRATION; COMPUTER SIMULATION; CONTROLLED STUDY; ELECTRIC CAPACITANCE; ELECTRIC POTENTIAL; ELECTRODE; FINITE ELEMENT ANALYSIS; MATHEMATICAL COMPUTING; MECHANICAL PROBE; PROCESS MODEL; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; SENSITIVITY ANALYSIS; STATIC ELECTRICITY; SURFACE PROPERTY;

EID: 77956231484     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2010.06.011     Document Type: Article

References (37)

1. International Technology Roadmap for Semiconductors Semiconductor Industry Association 1999, 1999 ed.
2. http://www.itrs.net/Links/2006Update/2006UpdateFinal.htm.
3. J.R. Matey, US Patent 4481616.
4. Matey J.R., Blanc J.J. J. Appl. Phys. 1985, 57:1437-1444.
5. Bugg C.D., King P.J. J. Phys. E 1988, 21:147-151.
6. Kleinknecht H.P., Sandercock J.R., Meier H. Scanning Microsc. 1988, 2:1839-1844.
7. Williams C.C., Slinkman J., Hough W.P., Wickramasinghe H.K. Appl. Phys. Lett. 1989, 55:1662-1664.
8. Lányi Š., Török J., Řehůřek P. Rev. Sci. Instrum. 1994, 65:2258-2261.
9. Lányi Š., Hruškovic M. Rev. Sci. Instrum. 2002, 73:2923-2927.
10. Edwards H., McGlothlin R., San Martin R., Gribelyuk E.U.M., Mahaffy R., Shih C.K., List R.S., Ukraintsev V.A. Appl. Phys. Lett. 1998, 72:698-700.
11. Williams C.C., Rev.Ann. Mater. Sci. 1999, 29:471-504.
12. Zavyalov V.V., McMurray J.S., Stirling S.D., Williams C.C., Smith H. J. Vac. Sci. Technol. B 2000, 18:549-554.
13. Calcagno L., Raineri V. Curr. Opin. Solid State Mater 2002, 6:47-54.
14. Duhayon N., Eyben P., Fouchier M., Clarysse T., Vandervorst W., lvarez D., Schoemann S., Ciappa M., Stangoni M., Fichtner W., Formanek P., Kittler M., Raineri V., Giannazzo F., Goghero D., Rosenwaks Y., Shikler R., Saraf S., Sadewasser S., Barreau N., Glatzel T., Verheijen M., Mentink S.A.M., von Sprekelsen M., Maltezopoulos T., Wiesendanger R., Hellemans L. J. Vac. Sci. Technol. B 2004, 22:385-393.
15. Giannazzo F., Raineri V., Mirabella S., Impellizzeri G., Priolo F., Fedele M., Mucciato R. J. Vac. Sci. Technol B 2006, 24:370-374.
16. Douhéret O., Anand S., Angulo Barrios C., Lourdudoss S. Appl. Phys. Lett. 2002, 81:960-962.
17. Ciampolini L., Giannazzo F., Ciappa M., Fichtner W., Raineri V. Mat. Sci. Semicond. Process 2001, 4:85-88.
18. Zhou X., Yu E.T., Florescu D.I., Ramer J.C., Lee D.S., Ting S.M., Armour E.A. Appl. Phys. Lett. 2005, 86:202113.
19. Jeandupeux O., Marsico V., Acovic A., Fazan P., Brune H., Kern K. Microelectron. Reliab 2002, 42:225-231.
20. Lányi Š. Acta Phys. Slov. 2002, 52:55-64.
21. Bussmann E., Williams C.C. Rev. Sci. Instrum. 2004, 75:422-425.
22. Giannazzo F., Goghero D., Raineri V., Mirabella S., Priolo F. Appl. Phys. Lett. 2003, 83:2659-2661.
23. Diebold A.C., Rump M.R., Kopanski J.J., Seiler D.G. J. Vac. Sci. Technol. B 1996, 14:196-201.
24. Clarysse T., Caymax M., de Wolf P., Trenkler T., Vandervorst W., McMurray J.S., Kim J., Williams C.C., Clark J.G., Neubauer G. J. Vac. Sci. Technol. B 1998, 16:394-400.
25. Lányi Š. Ultramicroscopy 2005, 103:221-228.
26. Sze S.M. Physics of Semiconductor Devices 1969, Wiley-Interscience, New York.
27. Palmer R.C., Denlinger E.J., Kawamoto H. RCA Review 1982, 43:194-211.
28. Zienkiewicz O.C. The Finite Element Method 1977, Mc Graw-Hill, New York.
29. Lányi Š., Hruškovic M. J. Phys. D: Appl. Phys. 2003, 36:598-602.
30. Lányi Š. Surf. Interface Anal. 1999, 27:348-353.
31. Lee T.P., Sze S.M. Solid State Electron 1967, 10:1105-1108.
32. Marchiando J.F., Kopanski J.J., Lowney J.R. J. Vac. Sci. Technol. B 1998, 16:463-470.
33. L. Dědek, L. Dědková, MEP 6.0, Department of Electrical Engineering and Computer Science, Technical University of Brno, Brno, Czech Republic.
34. Huang Y., Williams C.C. J. Vac. Sci. Technol. B 1994, 12:369-372.
35. Kopanski J.J., Marchiando J.F., Lowney J.R. J. Vac. Sci. Technol. B 1996, 14:242-247.
36. Ciampolini L., Ciappa M., Malberti P., Fichtner W. Solid State Electron. 2001, 46:445-449.
37. Zavyalov V.V., McMurray J.C., Williams C.C. J. Vac. Sci. Technol. B 2000, 18:1125-1133.