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Applied Physics Letters

Volumn 81, Issue 6, 2002, Pages 960-962

Characterization of GaAs/AlGaAs laser mesas regrown with semi-insulating GaInP by scanning capacitance microscopy

(4) Douheret O a Anand, S a Barrios, C Angulo a Lourdudoss, S a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

2D POISSON; AC BIAS; BAND-BENDING EFFECTS; BURIED HETEROSTRUCTURES; CROSS-SECTIONAL SCANNING; DEVICE STRUCTURES; ELECTRICAL NATURE; FREE CARRIER DENSITY; GAAS/ALGAAS; GAAS/ALGAAS LASER; GAINP; HYDRIDE VAPOR PHASE EPITAXY; MESA SIDEWALL; NANOSCALE FEATURES; P-CLADDING; SCANNING CAPACITANCE MICROSCOPY; SEMI-INSULATING; SEMI-INSULATING PROPERTIES;

CAPACITANCE;

INSULATION;

EID: 79956024349 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1491607 Document Type: Article

Times cited : (14)

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