Use of scanning capacitance microscopy for controlling wafer processing

Microelectronics Reliability

Volumn 42, Issue 2, 2002, Pages 225-231

  Jeandupeux, O ^a   Marsico, V ^b   Acovic, A ^b   Fazan, P ^a   Brune, H ^a   Kern, K ^a,c  

^a EPFL   (Switzerland)

^b EM Microelectronic   (Switzerland)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CARRIER CONCENTRATION; CHARGE TRANSFER; MICROELECTRONICS; MOS CAPACITORS; OPTIMIZATION; PERMITTIVITY; SEMICONDUCTOR DOPING; SILICA; SILICON WAFERS; WSI CIRCUITS;

ELECTROSTATIC FORCE MICROSCOPY (EFM); SCANNING CAPACITANCE MICROSCOPY (SCM);

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0036472351     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00234-7     Document Type: Article

References (21)

1. Quantitative two-dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy
2. Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon
3. Scanning capacitance microscopy measurements of two-dimensional dopant profiles across junctions
4. Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices
5. Advances in experimental technique for quantitative two-dimensional dopant profiling by scanning capacitance microscopy
6. Doping landscapes in the nanometer range by scanning capacitance microscopy
7. Quantification of scanning capacitance microscopy imaging of the pn-junction through electrical simulation
8. Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy
9. Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structures
10. Contrast reversal in scanning capacitance microscopy imaging
11. Epitaxial staircase for the calibration of electrical characterization techniques
12. Two-dimensional profiling in silicon using conventional and electrochemical selective etching
13. Quantification of scanning capacitance microscopy measurements for 2D dopant profiling
14. Model database for determining dopant profiles from scanning capacitance microscope measurements
15. 2 thickness variation on Si using modified atomic force microscope
16. Pn-junction delineation in Si devices using scanning capacitance spectroscopy
17. Scanning probe microscopy for 2-D semiconductor dopant profiling and device failure analysis
18. Modeling electrostatic scanning force microscopy of semiconductors
19. Observation of surface potential at nanometer scale by electrostatic force microscopy (EFM) with large signals
20. Detecting electrical forces in noncontact atomic force microscopy