Noise in scanning capacitance microscopy measurements

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1125-1133

  Zavyalov, V V ^a   McMurray, J S ^a   Williams, C C ^a  

^a UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SENSORS; SURFACE ROUGHNESS;

CAPACITANCE SENSOR NOISE; SCANNING CAPACITANCE MICROSCOPY (SCM); STATIONARY SURFACE NOISE;

CAPACITANCE MEASUREMENT;

EID: 0034186993     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591476     Document Type: Article

References (20)

1. J. S. McMurray, J. Kim, and C. C. Williams, J. Vac. Sci. Technol. B 15, 1011 (1997).
2. J. S. McMurray, J. Kim, and C. C. Williams, J. Vac. Sci. Technol. B 16, 344 (1998).
3. V. V. Zavyalov, J. S. McMurray, and C. C. Williams, Rev. Sci. Instrum. 70, 158 (1999).
4. J. J. Kopanski, J. F. Marchiando, D. W. Berning, R. Alvis, and H. E. Smith, J. Vac. Sci. Technol. B 16, 344 (1998).
5. H. Edwards et al., Appl. Phys. Lett. 72, 698 (1998).
6. G. Neubauer, A. Erickson, C. C. Williams, J. J. Kopansky, M. Rodgers, and D. Adderton, J. Vac. Sci. Technol. B 14, 426 (1996).
7. R. N. Kleiman, M. L. O'Malley, F. H. Baumann, J. P. Garno, and G. L. Timp, Tech. Dig. Int. Electron Devices Meet. 691 (1997).
8. V. V. Zavyalov, J. S. McMurray, and C. C. Williams, J. Appl. Phys. 85, 7774 (1999).
9. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, 4300 Stevens Creek Boulevard, San Jose, CA, 1997.
10. J. S. McMurray, V. V. Zavyalov, and C. C. Williams (unpublished).
11. J. S. McMurray and C. C. Williams, in Characterization and Metrology for ULSI Technology: 1998 International Conference, edited by D. G. Sieler et al. (AIP, New York, 1998), pp. 753-756.
12. R. C. Palmer, E. J. Denlinger, and H. Sawamoto, RCA Rev. 43, 194 (1982).
13. Y. Huang and C. C. Williams, Appl. Phys. Lett. 66, 344 (1995).
14. K. L. Westra, A. W. Mitchell, and D. J. Thomson, J. Appl. Phys. 74, 3608 (1993).
15. G. J. Pietsch, G. S. Higashi, and Y. J. Chabal, Appl. Phys. Lett. 64, 3115 (1994); G. J. Pietsch, Appl. Phys. A: Mater. Sci. Process. 60, 347 (1995).
16. G. J. Pietsch, G. S. Higashi, and Y. J. Chabal, Appl. Phys. Lett. 64, 3115 (1994); G. J. Pietsch, Appl. Phys. A: Mater. Sci. Process. 60, 347 (1995).
17. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and M. Ohwada, J. Appl. Phys. 68, 1272 (1990); D. Graf, M. Grundner, and R. Schulz, ibid. 68, 5155 (1990); M. L. W. van der Zwan, J. A. Bardwell, G. I. Spoule, and M. J. Graham, Appl. Phys. Lett. 64, 446 (1994).
18. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and M. Ohwada, J. Appl. Phys. 68, 1272 (1990); D. Graf, M. Grundner, and R. Schulz, ibid. 68, 5155 (1990); M. L. W. van der Zwan, J. A. Bardwell, G. I. Spoule, and M. J. Graham, Appl. Phys. Lett. 64, 446 (1994).
19. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and M. Ohwada, J. Appl. Phys. 68, 1272 (1990); D. Graf, M. Grundner, and R. Schulz, ibid. 68, 5155 (1990); M. L. W. van der Zwan, J. A. Bardwell, G. I. Spoule, and M. J. Graham, Appl. Phys. Lett. 64, 446 (1994).
20. G. M. Yu, P. B. Griffin, and J. D. Plummer, Tech. Dig. Int. Electron Devices Meet. 717 (1998).