Observation of in concentration variations in InGaNGaN quantum-well heterostructures by scanning capacitance microscopy

Applied Physics Letters

Volumn 86, Issue 20, 2005, Pages 1-3

  Zhou, X ^a   Yu, E T ^a   Florescu, D I ^b   Ramer, J C ^b   Lee, D S ^b   Ting, S M ^b   Armour, E A ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Veeco Compound Semiconductor Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGES; CONCENTRATION VARIATIONS; SHEET CHARGES; STRUCTURAL VARIATIONS;

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSCOPIC EXAMINATION; OPTIMIZATION; SCANNING; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 20844441063     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1929871     Document Type: Article

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