Computational investigation of the accuracy of constant-dC scanning capacitance microscopy for ultra-shallow doping profile characterization

Solid-State Electronics

Volumn 46, Issue 3, 2002, Pages 445-449

  Ciampolini, Lorenzo ^a   Ciappa, Mauro ^a   Malberti, Paolo ^a   Fichtner, Wolfgang ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

2D dopant profiling; Capacitance voltage method; Electrical simulation; Scanning capacitance microscopy

Indexed keywords

CAPACITANCE; COMPUTATION THEORY; COMPUTER SIMULATION; FEEDBACK CONTROL; SCANNING;

SCANNING CAPACITANCE MICROSCOPY (SCM);

SEMICONDUCTOR DOPING;

EID: 0036498394     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00118-6     Document Type: Article

References (13)

1. Lateral dopant profiling in structures on a 100 nm scale using scanning capacitance microscopy
2. Characterization of two-dimensional dopant profiles: Status and review
3. Validation of two-dimensional implant and diffusion profiles using novel scanning capacitance microscope sample preparation and deconvolution techniques
4. Inverse modeling applied to scanning capacitance microscopy for improved spatial resolution and accuracy
5. Model database for determining dopant profiles from scanning capacitance microscope measurements
6. Quantification of scanning capacitance microscopy imaging of the pn junction through electrical simulation
7. Two-dimensional simulation of scanning capacitance microscopy measurements of arbitrary doping profiles
8. Contrast reversal in scanning capacitance microscopy imaging
9. Scalable parallel sparse factorization with left-right looking strategy on shared memory multiprocessors
10. Boundary sensitive mesh generation using an offsetting
11. +-p samples
12. Depth dependent carrier density profile by scanning capacitance microscopy