Simulation of scanning capacitance microscopy measurements on micro-sectioned and bevelled n+-p samples

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 85-88

  Ciampolini, L ^a   Giannazzo, F ^c   Ciappa, M ^a   Fichtner, W ^a   Raineri, V ^b  

^a ETH ZURICH   (Switzerland)

^b CNR   (Italy)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC RESISTANCE MEASUREMENT; IMAGE ANALYSIS; IMAGE QUALITY; MICROSCOPIC EXAMINATION; SEMICONDUCTOR JUNCTIONS;

DOPANT PROFILING METHODS; SCANNING CAPACITANCE MICROSCOPY (SCM);

BIPOLAR INTEGRATED CIRCUITS;

EID: 0035247655     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00169-4     Document Type: Article

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