Erratum to "Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition". [J. Crystal Growth 306 (2007) 297] (DOI:10.1016/j.jcrysgro.2007.05.009);Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition

Journal of Crystal Growth

Volumn 306, Issue 2, 2007, Pages 297-302

  Hori, Tsutomu ^a,b   Danno, Katsunori ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

^b HITACHI CABLE LTD   (Japan)

Author keywords

A3. Hot wall epitaxy; A3. Vapor phase epitaxy; B2. Semiconducting materials

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GROWTH RATE; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS;

BASAL PLANE DISLOCATION (BPD); CHEMICAL MECHANICALLY POLISHED (CMP) SUBSTRATES; HOT-WALL EPITAXY;

SILICON CARBIDE;

EID: 34547667330     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.08.023     Document Type: Erratum

References (30)

1. Masahara K., Takahashi T., Kushibe M., Ohno T., Nishio J., Kojima K., Ishida Y., Suzuki T., Tanaka T., Yoshida S., and Arai K. Mater. Sci. Forum 389-393 (2002) 179
2. Ishida Y., Takahashi T., Kojima K., Okumura H., Arai K., and Yoshida S. Mater. Sci. Forum 457-460 (2004) 213
3. Lu P., Edgar J.H., Glembocki O.J., Klein P.B., Glaser E.R., Perrin J., and Chaudhuri J. J. Crystal Growth 285 (2005) 506
4. La Via F., Galvagno G., Firrincieli A., Roccaforte F., Di Franco S., Ruggiero A., Barbera M., Reitano R., Musumeci P., Calcagno L., Foti G., Mauceri M., Leone S., Pistone G., Portuese F., Abbondanza G., Abagnale G., Valente G.L., and Crippa D. Mater. Sci. Forum 527-529 (2006) 163
5. Ohno T., Yamaguchi H., Kuroda S., Kojima K., Suzuki T., and Arai K. J. Crystal Growth 271 (2004) 1
6. Ellison A., Zhang J., Peterson J., Henry A., Wahab Q., Bergman J.P., Makarov Y.N., Vorob'ev A., Vehanen A., and Janzén E. Mater. Sci. Eng. B 61/62 (1999) 113
7. Tsuchida H., Kamata I., Jikimoto T., and Izumi K. J. Crystal Growth 237-239 (2002) 1206
8. Fujiwara H., Danno K., Kimoto T., Tojo T., and Matsunami H. J. Crystal Growth 281 (2005) 370
9. Ha S., Mieszkowski P., Skowronski M., and Rowland L.B. J. Crystal Growth 244 (2002) 257
10. Jacobson H., Bergman J.P., Hallin C., Janzén E., Tuomi T., and Lendenmann H. J. Appl. Phys. 95 (2004) 1485
11. Ha S., Skowronski M., and Lendenmann H. J. Appl. Phys. 96 (2004) 393
12. Storasta L., Bergman J.P., Hallin C., and Janzén E. Mater. Sci. Forum 389-393 (2002) 549
13. Tawara T., Tsuchida H., Izumi S., Kamata I., and Izumi K. Mater. Sci. Forum 457-460 (2004) 565
14. Kimoto T., Nakazawa S., Hahimoto K., and Matsunami H. Appl. Phys. Lett. 79 (2001) 2761
15. Brotherton S.D. Solid State Electron. 26 (1983) 987
16. Nishizawa S., and Pons M. Microelectron. Eng. 83 (2006) 100
17. Tsuchida H., Kamata I., Miyanagi T., Nakamura T., Nakayama K., Ishii R., and Sugawara Y. Mater. Sci. Forum 527-529 (2006) 231
18. Chen W., and Capano M.A. J. Appl. Phys. 98 (2005) 114907
19. Zhang Z., Moulton E., and Sudarshan T.S. Appl. Phys. Lett. 89 (2006) 081910
20. Sumakeris J.J., Bergman J.P., Das M.K., Hallin C., Hull B.A., Janzén E., Lendenmann H., O'Loughlin M.J., Paisley M.J., Ha S., Skowronski M., Palmour J.W., and Carter Jr. C.J. Mater. Sci. Forum 527-529 (2006) 141
21. Danno K., Hashimoto K., Saitoh H., Kimoto T., and Matsunami H. Jpn. J. Appl. Phys. 43 (2004) L969
22. Larkin D.J., Neudeck P.G., Powell J.A., and Matus L.G. Appl. Phys. Lett. 65 (1994) 1659
23. Dalibor T., Pensl G., Matsunami H., Kimoto T., Choyke W.J., Schöner A., and Nordell N. Phys. Status Solidi A 162 (1997) 199
24. Hemmingsson C., Son N.T., Kordina O., Bergman J.P., Janzén E., Lindström J.L., Savage S., and Nordell N. J. Appl. Phys. 81 (1997) 6155
25. Danno K., Hori T., and Kimoto T. J. Appl. Phys. 101 (2007) 053709
26. Patrick L., and Choyke W.J. Phys. Rev. B 5 (1972) 3253
27. Eberlein T.A.G., Fall C.J., Jones R., Briddon P.R., and Öberg S. Phys. Rev. B 65 (2002) 184108
28. Rauls E., Gerstmann U., Pinheiro M.V.B., Greulich-Weber S., and Spaeth J.M. Mater. Sci. Forum 483-485 (2005) 465
29. Strasta L., Bergman J.P., Janzén E., and Henry A. J. Appl. Phys. 96 (2004) 4909
30. Danno K., and Kimoto T. J. Appl. Phys. 100 (2006) 113728