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Journal of Crystal Growth

Volumn 241, Issue 4, 2002, Pages 431-438

Growth characteristics of SiC in a hot-wall CVD reactor with rotation

(7) Zhang, J a Forsberg, U a Isacson, M a Ellison, A a Henry, A a Kordina, O a Janzen E a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

A1. Crystal morphology; A1. Doping; A3. Chemical vapor deposition processes; A3. Hot wall reactors; B2. Semiconducting materials

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); MORPHOLOGY; SEMICONDUCTOR MATERIALS; SILICON CARBIDE;

HOT-WALL REACTORS;

CRYSTAL GROWTH;

EID: 0036609227 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)00921-1 Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.