Effect of HCl addition on gas-phase and surface reactions during homoepitaxial growth of SiC at low temperatures

Journal of Applied Physics

Volumn 104, Issue 5, 2008, Pages

  Melnychuk, G ^a   Lin, H D ^a   Kotamraju, S P ^a   Koshka, Y ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARBON CLUSTERS; CHLORINE COMPOUNDS; DISSOCIATION; ECOLOGY; FLOW RATE; GAS DYNAMICS; GAS SUPPLY; GASES; LEAKAGE (FLUID); MECHANISMS; MOLECULAR BEAM EPITAXY; NONMETALS; RATE CONSTANTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE; SIZE DISTRIBUTION; SURFACE REACTIONS;

CARBON RATIO; CARBON SPECIES; CLUSTER DISSOCIATION; DISSOCIATION PROCESSES; GAS FLOWING; GAS-PHASE; GAS-PHASE CLUSTERS; HOMOEPITAXIAL GROWTH; HOMOGENEOUS GAS; HOT ZONES; LOW TEMPERATURES; POLY-CRYSTALLINE; POLYCRYSTALLINE DEPOSITION; RATE ENHANCEMENT; SILICON CLUSTERS; SIMPLE MODELING; SPATIAL DISTRIBUTION OF; UNDESIRABLE EFFECTS;

EPITAXIAL GROWTH;

EID: 51849148347     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2975990     Document Type: Article

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