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Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1213-1218

High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition

(4) Nakazawa, S a Kimoto, T a Hashimoto, K a Matsunami, H a

a KYOTO UNIVERSITY (Japan)

Author keywords

A3. Chemical vapor deposition; A3. Vapor phase epitaxy; B1. Silicon carbide; B2. Semiconducting silicon compounds; B3. Power devices

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); HYDROGEN; LOW TEMPERATURE OPERATIONS; PHOTOLUMINESCENCE; SILICON CARBIDE;

HOT-WALL CHEMICAL VAPOR DEPOSITION;

VAPOR PHASE EPITAXY;

EID: 0036531187 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02174-1 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.