SCOPUS 정보 검색 플랫폼

Volumn 615 617, Issue , 2009, Pages 105-108

Turning of basal plane dislocations during epitaxial growth on 4° off-axis 4H-SiC

(8) Myers Ward, R L a VanMil, B L a Stahlbush, R E a Katz, S L a McCrate, J M a Kitt, S A a Eddy Jr , C R a Gaskill, D K a

a NAVAL RESEARCH LABORATORY (United States)

Author keywords

4H SiC; 4 Off axis; Basal plane dislocations; Epitaxy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EDGE DISLOCATIONS; SILICON CARBIDE;

4H-SIC; BASAL PLANE DISLOCATIONS; GROWTH CONDITIONS; HOT WALL CHEMICAL VAPOR DEPOSITION; OFF-AXIS; THICKNESS OF THE FILM; THREADING EDGE DISLOCATION; ULTRAVIOLET PHOTOLUMINESCENCE;

EPITAXIAL GROWTH;

EID: 79251538932 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.105 Document Type: Conference Paper

Times cited : (58)

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