Rate-determining process in chemical vapor deposition of SiC on off-axis α-SiC (0001)

Journal of Crystal Growth

Volumn 270, Issue 3-4, 2004, Pages 455-461

  Nakamura, Shunichi ^a   Kimoto, Tsunenobu ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; DIFFUSION; IMPURITIES; PARTIAL PRESSURE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

CHEMICAL VAPOR DEPOSITION REACTORS; FILM THICKNESS; GROWTH PARAMETERS; IMPURITY DOPING;

CRYSTAL GROWTH;

EID: 4544229820     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.06.049     Document Type: Article

References (12)

1. H. Matsunami, T. Kimoto, Mater. Sci. Eng. B 20 (1997) 125.
2. T. Kimoto, H. Nishino, W.S. Yoo, H. Matsunami, J. Appl. Phys. 73 (1993) 726.
3. S. Nakamura, T. Kimoto, H. Matsunami, Mater. Sci. Forum 183 (2002) 389-393.
4. F.C. Eversteijn, P.J.W. Severin, C.H.J. Brekel, H.L. Peek, J. Electrochem. Soc. 117 (1970) 925.
5. M.J.P. Duchemin, M.M. Bonnet, M.F. Koelsch, J. Electrochem. Soc. 125 (1978) 637.
6. F. Hottier, R. Cadoret, J. Crystal Growth 52 (1981) 199.
7. F. Hottier, R. Cadoret, J. Crystal Growth 61 (1983) 245.
8. R. Cadoret, F. Hottier, J. Crystal Growth 61 (1983) 259.
9. L.J. Giling, H.H.C. de Moor, W.P.J.H. Jacobs, A.A. Saaman, J. Crystal Growth 78 (1986) 303.
10. W.K. Burton, N. Cabrera, F.C. Frank, Philos. Trans. Roy. Soc. London A 243 (1951) 299.
11. F.C. Eversteijn, Philips Res. Rep. 26 (1971) 134.
12. R.M. Olsen, Essentials of Engineering Fluid Flow, International Textbook, Scranton, Pennsylvania, 1966.