In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma

Applied Surface Science

Volumn 121-122, Issue , 1997, Pages 233-236

  Liu, Y C ^a   Furukawa, K ^a   Gao, D W ^a   Nakashima, H ^a   Uchino, K ^a   Muraoka, K ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ARGON; ELECTRON CYCLOTRON RESONANCE; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); MICROSTRUCTURE; MICROWAVES; PLASMA APPLICATIONS; SILICON NITRIDE; SPUTTER DEPOSITION; SURFACE STRUCTURE;

ELECTRON CYCLOTRON RESONANCE MICROWAVE PLASMA; FOURIER TRANSFORM INFRARED REFLECTIVE ABSORPTION SPECTROSCOPY;

AMORPHOUS FILMS;

EID: 0031549848     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00295-X     Document Type: Article

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