Nitrogen interaction with hydrogen-terminated silicon surfaces at the atomic scale

Nature Materials

Volumn 8, Issue 10, 2009, Pages 825-830

  Dai, Min ^a   Wang, Yu ^a   Kwon, Jinhee ^b   Halls, Mathew D ^c   Chabal, Yves J ^b  

^a RUTGERS UNIVERSITY   (United States)

^b The University of Texas at Dallas   (United States)

^c ACCELRYS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CALCULATIONS; CHEMICAL BONDS; DANGLING BONDS; HYDROGEN BONDS; INFRARED SPECTROSCOPY; NITROGEN; PASSIVATION; SEMICONDUCTING SILICON; SILICON; SURFACE DEFECTS;

FIRST-PRINCIPLES CALCULATION; HYDROGEN-TERMINATED SILICON SURFACES; MECHANISTIC PATHWAYS; OXYGEN AND NITROGENS; SEMI-CONDUCTOR SURFACES; SURFACE DANGLING BONDS; SURFACE INFRARED SPECTROSCOPY; WET CHEMICAL PROCESS;

SURFACE REACTIONS;

EID: 70349306255     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat2514     Document Type: Article

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