Study of thin hafnium oxides deposited by atomic layer deposition

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 856-861

  Ganem, J J ^a   Trimaille, I ^a   Vickridge, I C ^a   Blin, D ^b   Martin, F ^c  

^a SORBONNE UNIVERSITÉ   (France)

^b ASM France   (France)

^c CEA LETI   (France)

Author keywords

18O resonance; ALD; Hafnium oxide; HfO2; High k dielectrics; Oxidation; Stable isotopic tracing

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); INERT GASES; MOSFET DEVICES; OXIDATION; OXYGEN; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICA; THIN FILMS;

ATOMIC EXCHANGE PROCESSES; ATOMIC LAYER DEPOSITION (ALD); THERMAL REOXIDATION;

HAFNIUM COMPOUNDS;

EID: 2342539010     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.176     Document Type: Conference Paper

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