Molecular self-assembly at bare semiconductor surfaces: Cooperative substrate-molecule effects in octadecanethiolate monolayer assemblies on GaAs(111), (110), and (100)

ACS Nano

Volumn 4, Issue 6, 2010, Pages 3447-3465

  McGuiness, Christine L ^a,e   Diehl, Gregory A ^a   Blasini, Daniel ^b   Smilgies, D M ^c   Zhu, M ^a   Samarth, Nitin ^a   Weidner, Tobias ^d,f   Ballav, Nirmalya ^d   Zharnikov, Michael ^d   Allara, David L ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b Department of Molecular Biology and Genetics   (United States)

^c Department of Obstetrics Gynecology   (United States)

^d UNIVERSITY OF HEIDELBERG   (Germany)

^e Plextronics Inc   (United States)

^f UNIVERSITY OF WASHINGTON   (United States)

Author keywords

Chemisorption; GaAs; Grazing incidence x ray diffraction; Self assembled monolayers; Self assembly; Semiconductor surfaces

Indexed keywords

2D STRAIN; COOPERATIVE PROCESS; GAAS; GAAS(001); GRAZING INCIDENCE X-RAY DIFFRACTION; HEXAGONAL SYMMETRY; INDUCED STRESS; INORGANIC SUBSTRATES; INTERMOLECULAR PACKING; LATTICE SPACING; MOLECULAR LATTICE; MOLECULAR SELF ASSEMBLY; MONOLAYER ASSEMBLIES; NEAR EDGE X-RAY ABSORPTION FINE STRUCTURES; OCTADECANETHIOL; PACKING FORCES; SEMI-CONDUCTOR SURFACES; SOFT SUBSTRATES; SUBSTRATE LATTICE; SUBSTRATE SURFACE; SURFACE LATTICE; X-RAY PHOTOELECTRONS;

ABSORPTION SPECTROSCOPY; ADSORBATES; CHEMISORPTION; DIFFRACTION; DYES; ELECTRON ENERGY LEVELS; GALLIUM ARSENIDE; PHOTOELECTRON SPECTROSCOPY; SELF ASSEMBLED MONOLAYERS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM; SUBSTRATES; TWO DIMENSIONAL; X RAY DIFFRACTION; X RAYS;

GALLIUM ALLOYS;

GALLIUM; GALLIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE; THIOL DERIVATIVE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; GALLIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTORS; SULFHYDRYL COMPOUNDS; SURFACE PROPERTIES;

EID: 77955862773     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn1004638     Document Type: Article

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