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Surface Science

Volumn 415, Issue 1-2, 1998, Pages 29-36

Structural studies of sulfur-passivated GaAs (100) surfaces with LEED and AFM

(5) Ke, Y a Milano, S a Wang, X W a Tao, N a Darici, Y a

a FLORIDA INTERNATIONAL UNIVERSITY (United States)

Author keywords

Atomic force microscopy; Gallium arsenide; Low energy electron diffraction; Roughness; Sulfur; Surface structure

Indexed keywords

AMMONIUM COMPOUNDS; ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; DIMERS; LOW ENERGY ELECTRON DIFFRACTION; PASSIVATION; SULFUR COMPOUNDS; SURFACE ROUGHNESS; VACUUM APPLICATIONS;

ULTRA-HIGH VACUUM (UHV);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032155338 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00435-X Document Type: Article

Times cited : (20)

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