Sequential plasma-activated bonding mechanism of silicon/silicon wafers

Journal of Microelectromechanical Systems

Volumn 19, Issue 4, 2010, Pages 840-848

  Howlader, Matiar M R ^a   Kagami, G ^b   Lee, Sang Ho ^c   Wang, Jinguo G ^c   Kim, Moon J ^c   Yamauchi, Akira ^d  

^a MCMASTER UNIVERSITY   (Canada)

^b Shinko Seiki Co Ltd   (Japan)

^c UNIVERSITY OF TEXAS AT DALLAS   (United States)

^d Bondtech Company Ltd   (Japan)

Author keywords

Amorphous silicon oxide layer; electron energy loss spectroscopy (EELS); interfacial nanostructure; sequentially plasma activated bonding (SPAB) mechanism; voids formation; water contact angle

Indexed keywords

ACTIVATED SURFACES; BONDED INTERFACE; BONDED WAFERS; BONDING QUALITY; BONDING STRENGTH; CHEMICAL COMPOSITIONS; ELECTRON ENERGY LOSS SPECTROSCOPY (EELS); HYDROGEN GAS; HYDROPHILIC BONDING; INTERFACE VOID; PLASMA-ACTIVATED BONDINGS; ROOM TEMPERATURE; SEQUENTIALLY PLASMA-ACTIVATED BONDING (SPAB) MECHANISM; SURFACE HYDROPHILICITY; VOIDS FORMATION;

AMORPHOUS SILICON; CHEMICAL ACTIVATION; CONTACT ANGLE; DESORPTION; DIFFUSION BONDING; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ENERGY DISSIPATION; HEATING; HYDROPHILICITY; NANOSTRUCTURES; NUCLEAR INSTRUMENTATION; PLASMAS; SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; WAFER BONDING;

PHASE INTERFACES;

EID: 77955426866     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2010.2049731     Document Type: Article

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