Room-temperature microfluidics packaging using sequential plasma activation process

IEEE Transactions on Advanced Packaging

Volumn 29, Issue 3, 2006, Pages 448-456

  Howlader, M M R ^a   Suehara, S ^b,c   Takagi, H ^e   Kim, T H ^b,d   Maeda, R ^e   Suga, T ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b UNIVERSITY OF TOKYO   (Japan)

^c TERUMO CORPORATION   (Japan)

^d LG Electronics Inc   (South Korea)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Bonding strength; Glass; Hermetic sealing; Microfluidic device; Nitrogen radical plasma; Oxygen reactive ion etching (RIE) plasma; Sequential plasma activation process

Indexed keywords

ANNEALING; BOND STRENGTH (MATERIALS); HERMETIC SEALS; INTERFACES (MATERIALS); PLASMA APPLICATIONS; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE;

MICROFLUIDICS PACKAGING; NITROGEN RADICAL PLASMA; SEQUENTIAL PLASMA ACTIVATION;

ELECTRONICS PACKAGING;

EID: 33747584160     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2006.875070     Document Type: Article

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