Influence of nitrogen microwave radicals on sequential plasma activated bonding

Materials Letters

Volumn 64, Issue 3, 2010, Pages 445-448

  Howlader, M M R ^a   Wang, J G ^b   Kim, M J ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b The University of Texas at Dallas   (United States)

Author keywords

Electron energy loss spectroscopy; Interfacial amorphous layers; Oxygen reactive ion etching plasma; Role of nitrogen MW radicals plasma; Sequential plasma activated bonding; Water contact angle

Indexed keywords

AMORPHOUS LAYER; INTERFACIAL AMORPHOUS LAYERS; PLASMA-ACTIVATED BONDINGS; REACTIVE ION; ROLE OF NITROGEN MW RADICALS PLASMA; SEQUENTIAL PLASMA ACTIVATED BONDING; WATER CONTACT ANGLE;

AMORPHOUS SILICON; CHEMICAL ACTIVATION; CONTACT ANGLE; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ENERGY DISSIPATION; INTERFACIAL ENERGY; MICROWAVES; NITROGEN; NUCLEAR INSTRUMENTATION; OXYGEN; PLASMAS; REACTIVE ION ETCHING; SILICON COMPOUNDS; SILICON OXIDES;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 72049100403     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.11.044     Document Type: Article

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