Comprehensive investigation of sequential plasma activated Si/Si bonded interfaces for nano-integration on the wafer scale

Nanotechnology

Volumn 21, Issue 13, 2010, Pages

  Kibria, M G ^a   Zhang, F ^a   Lee, T H ^b   Kim, M J ^b   Howlader, M M R ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDED INTERFACE; ELECTRICAL CHARACTERISTIC; EXTERNAL PRESSURES; HYDROPHILIC SURFACES; NANO-METER SCALE; NANOSTRUCTURAL; PLASMA PARAMETER; PLASMA-ACTIVATED BONDINGS; REACTIVE ION; REACTIVE SURFACES; ROOM TEMPERATURE; WAFER SCALE;

ANGLE MEASUREMENT; CONTACT ANGLE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOSTRUCTURES; PLASMA DIAGNOSTICS; PLASMAS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

WAFER BONDING;

EID: 77949357018     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/13/134011     Document Type: Article

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