Study of the Ge wafer surface hydrophilicity after low-temperature plasma activation

Journal of the Electrochemical Society

Volumn 156, Issue 5, 2009, Pages

  Ma, Xiaobo ^a,c   Chen, Chao ^a,c   Liu, Weili ^a   Liu, Xuyan ^a,c   Du, Xiaofeng ^a,c   Song, Zhitang ^a   Lin, Chenglu ^a,b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b Shanghai Simgui Technology Co Ltd   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; ANGLE MEASUREMENT; CONTACT ANGLE; DEIONIZED WATER; GERMANIUM; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; HYDROPHILICITY; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; SILICON WAFERS; SOLAR CELL ARRAYS; SURFACE ROUGHNESS; WAFER BONDING;

ACTIVATION CONDITIONS; AMMONIUM HYDROXIDES; BONDING ENERGIES; CONTACT-ANGLE MEASUREMENTS; GE WAFERS; LOW-TEMPERATURE ANNEALING; LOW-TEMPERATURE PLASMAS; NITROGEN PLASMAS; PLASMA ACTIVATED SAMPLES; PLASMA ACTIVATIONS; SMOOTH SURFACES; SURFACE HYDROPHILICITIES; WET CHEMICAL TREATMENTS;

PLASMAS;

EID: 63649118200     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3089363     Document Type: Article

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