Combined process for wafer direct bonding by means of the surface activation method

Proceedings - Electronic Components and Technology Conference

Volumn 1, Issue , 2004, Pages 484-490

  Suga, T ^a   Kim, T H ^a   Howlader, M M R ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

POST-ANNEALING TEMPERATURE; RADICAL TREATMENT; SURFACE ACTIVATION; WAFER DIRECT BONDING TECHNOLOGY;

ACTIVATION ANALYSIS; ANNEALING; BOND STRENGTH (MATERIALS); MICROELECTROMECHANICAL DEVICES; PLASMA THEORY; SILICON WAFERS; THICKNESS MEASUREMENT;

WSI CIRCUITS;

EID: 10444249559     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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