Void-free low-temperature silicon direct-bonding technique using plasma activation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 1, 2007, Pages 229-234

  Ma, Xiaobo ^a,b   Liu, Weili ^a   Song, Zhitang ^a   Li, Wei ^c   Lin, Chenglu ^a,c  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c Shanghai Simgui Technology Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRONICS PACKAGING; FRACTURE TOUGHNESS; MEMS; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTIES;

BONDING ENERGY; BONDING INTERFACE; DIRECT-BONDING TECHNIQUE;

PLASMA THEORY;

EID: 34047101059     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2406060     Document Type: Article

References (16)

1. Semiconductor Wafer Bonding: Science and Technology, edited by, Q.-Y. Tong, and, U. Gösele, (Wiley, New York, 1999).
2. Q.-Y. Tong, G. Cha, R. Gafiteanu, and U. Gösele, J. Microelectromech. Syst. 3, 29 (1994).
3. A. Doll, F. Goldschmidtboeing, and P. Woias, Proceedings of the 17th IEEE International Conference on MEMS Maastricht, Netherlands, 2004 (unpublished), p. 665.
4. V. Dragoi, S. Farrens, and P. Lindner, Proc. SPIE 5836, 179 (2005).
5. V. Dragoi, P. Lindner, S. Farrens, and J. Weixlberger, IEEE Proceedings 04TH8748, Sinaia, Romania, 2004 (unpublished), p. 199.
6. M. Wiegand, M. Reiche, and U. Gösele, J. Electrochem. Soc. 147, 2734 (2000).
7. P. Amirfeiz, S. Bengtsson, M. Bergh, E. Zanghellini, and L. Börjesson, J. Electrochem. Soc. 147, 2693 (2000).
8. T. Suni, K. Henttinen, I. Suni, and J. Mäkinen, J. Electrochem. Soc. 149, G348 (2002).
9. D. Pasquariello, Plasma-Assisted Low-Temperature Semiconductor Wafer Bonding, Acta Universitatis Upsaliensis Uppsala, Comprehensive summaries of Uppsala Dissertations from the Faculty of Science and Technology Vol. 621 (Uppsala University Library, Uppsala, 2001).
10. B. Aspar et al., in Silicon Wafer Bonding Technology for VLSI and MEMS Applications, edited by, S. S. Iyer, and, A. J. Auberton-Herv́, (INSPEC, EE, London, 2002).
11. X. X. Zhang and J.-P.-P. Raskin, J. Microelectromech. Syst. 14, 368 (2005).
12. Q.-Y. Tong, Q. Gan, G. Hudson, G. Fountain, and P. Enquist, Appl. Phys. Lett. 83, 4767 (2003).
13. W. P. Maszara, G. Goetz, A. Caviglia, and J. B. Mckitterick, J. Appl. Phys. 64, 4943 (1988).
14. J. Mizuno et al., Proceedings of the International Conference on MEMS, NANO, and Smart Systems (ICMENS'05), Banff, Canada, 2005 (unpublished), p. 346.
15. C. M. Tan, W. B. Yu, and J. Wei, Appl. Phys. Lett. 88, 114102 (2006).
16. S. Farrens and B. E. Roberds, U.S. Patent No. 6,180,496 (30 January 2001).