Effect of prebonding surface treatments on Si-Si direct bonding: Bonding void decrease

ECS Transactions

Volumn 3, Issue 6, 2006, Pages 239-248

  Beneyton, R ^a   Fournel, F ^a   Morales, C ^a   Rieutord, F ^b   Monceau, H ^a  

^a CEA LETI   (France)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING VOID; SI-SI DIRECT BONDING; VACUUM BONDING;

BINDING ENERGY; BOND STRENGTH (MATERIALS); INDUCTIVELY COUPLED PLASMA; PLASMA APPLICATIONS; REACTIVE ION ETCHING; SURFACE TREATMENT; WAFER BONDING;

SILICON WAFERS;

EID: 34249075454     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2357074     Document Type: Conference Paper

References (14)

1. H. Monceau, B. Bataillou, C. Morales, A.M. Cartier and F. Rieutord, in Semiconductor Wafer Bonding: Science, Technology and Applications VIII, K.D. Hobart, S. Bengtsson, H. Baumgart, T. Suga and C.E. Hunt, Editors, PV 2005-02, p 34, The Electrochemical Society Proceedings Series, Pennington, NJ (2005)
2. D. Pasquariello, M. Lindeberg, C. Hedlund and K. Hjort, Sensors and Actuators, A82, p 239 (2000)
3. T. Suni, K. Henttinen, I. Suni and J. Mäkinen, J. Electrochem. Soc., 149 (6) G348 (2002)
4. A. Sanz-Velasco, P. Amirfeiz, S. Bengtsson and C. Colinge, J. Electrochem. Soc, 150, p 155 (2003)
5. A. Sanz-Velasco, P. Amirfeiz, S. Bengtsson and C. Colinge, in Semiconductor Wafer Bonding: Science, Technology and Applications VI, H. Baumgart, C.E. Hunt, S. Bengtsson and T. Abe, Editors, PV 2001-27, p 31, The Electrochemical Society Proceedings Series, Pennington, NJ (2001)
6. H. Moriceau, B. Bataillou, C. Morales, A.M. Cartier and F. Rieutord, Semiconductor Wafer Bonding: Science, Technology and Applications VII, S. Bengtsson, H. Baumgart, C.E. Hunt and T. Suga, Editors, PV 2003-19, p 110, The Electrochemical Society Proceedings Series, Pennington, NJ (2003)
7. H. Moriceau, F. Rieutord, C. Morales and A.M. Charvet, Microsystem Technologies, Vol. 12 (5), p 378 (2006)
8. X.X. Zhang and J.P. Raskin, Electrochem. and Solid State Lett., 7 (8), G172 (2004)
9. R.H. Esser, K.D. Hobart and F.J. Kub, J. Electrochem. Soc., 150-3, G228 (2003)
10. P. Amirfeiz, S. Bengtsson, M. Bergh, E. Zanghellini and L. Börjesson, J. Electrochem. Soc., Vol. 147, 7, p 2693, July (2000)
11. A. Weinert, P. Amirfeiz and S. Bengtsson, in Semiconductor Wafer Bonding: Science, Technology and Applications VI, H. Baumgart, C.E. Hunt, S. Bengtsson and T. Abe, Editors, PV 2001-27, p 1, The Electrochemical Society Proceedings Series, Pennington, NJ (2001)
12. K. Mitani, V. Lehmann, R. Stengl, D. Feijoo, U. Gösele and H.Z. Massoud, Jap. J. Appl. Phys. 30, 4, p 615 (1991)
13. W.P. Maszara, J. Appl. Phys., 64 (10) p 4943, 15 Nov. (1988)
14. F. Rieutord, J. Eymery, F. Fournel, D. Duttard, R. Oeser, O. Plantevin, H. Moriceau and B. Aspar, Phys. Rev. B. 63, p 1 (2001)