Role of heating on plasma-activated silicon wafers bonding

Journal of the Electrochemical Society

Volumn 156, Issue 11, 2009, Pages

  Howlader, M M R ^a   Suga, T ^b   Itoh, H ^b   Lee, T H ^c   Kim, M J ^c  

^a MCMASTER UNIVERSITY   (Canada)

^b UNIVERSITY OF TOKYO   (Japan)

^c The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AFTER-TREATMENT; BONDED INTERFACE; BONDING STRENGTH; BULK SILICON; BULK WAFERS; COMPARATIVE STUDIES; GAS PRESSURES; HIGH STRENGTH; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; INTERFACIAL LAYER; INTERFACIAL OXIDE LAYERS; NITROGEN RADICAL; OXIDE LAYER; PLASMA PROCESSING PARAMETERS; PLASMA-ACTIVATED BONDINGS; SILICON SURFACES; THERMALLY ACTIVATED;

BONDING; DIFFUSION BONDING; ELECTRON MICROSCOPES; HEATING; OXYGEN; PHASE INTERFACES; PLASMA DIAGNOSTICS; PLASMAS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; SURFACE PROPERTIES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

WAFER BONDING;

EID: 70349728600     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3223985     Document Type: Article

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