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Volumn 151, Issue 1, 2009, Pages 81-86

Effect of nanoscale surface topography on low temperature direct wafer bonding process with UV activation

Author keywords

Bearing ratio; Low temperature wafer bonding; Nanoscale surface roughness; Root mean square; UV activation

Indexed keywords

BEARINGS (STRUCTURAL); ENGINEERING GEOLOGY; IRRADIATION; MEMS; METAL ANALYSIS; MICROELECTROMECHANICAL DEVICES; NANOSTRUCTURED MATERIALS; PHOTORESISTS; PROCESS CONTROL; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SURFACE ANALYSIS; SURFACE PROPERTIES; SURFACE ROUGHNESS; SURFACES; THERMAL EFFECTS;

EID: 63049131277     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2009.01.023     Document Type: Article
Times cited : (20)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.