Implications of image plane line-edge roughness requirements on extreme ultraviolet mask specifications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7379, Issue , 2009, Pages

  Naulleau, Patrick P ^a   George, Simi A ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Extreme ultraviolet; Line edge roughness; Lithography; Multilayer; Photomask; Speckle; Surface roughness

Indexed keywords

EUV MASK; EXTREME ULTRAVIOLET; EXTREME ULTRAVIOLET MASKS; IMAGE PLANE; LINE-EDGE ROUGHNESS; MASK ABSORBER; PROCESS WINDOW ANALYSIS; RANDOM-PHASE; REFLECTED BEAM; SIMULATION RESULT;

EXTREME ULTRAVIOLET LITHOGRAPHY; MASKS; MULTILAYERS; PHOTOMASKS; PHOTORESISTS; SPECIFICATIONS; SPECKLE; SURFACE PROPERTIES; SURFACE ROUGHNESS; ULTRAVIOLET DEVICES;

ROUGHNESS MEASUREMENT;

EID: 69949154613     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.824265     Document Type: Conference Paper

References (11)

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8. Line edge analysis was performed using the SuMMIT off-line LER analysis package.
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