Applicability of extreme ultraviolet lithography to fabrication of half pitch 35nm interconnects

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Aoyama, Hajime ^a   Tanaka, Yuusuke ^a   Tawarayama, Kazuo ^a   Nakamura, Naofumi ^a   Soda, Eiichi ^a   Oda, Noriaki ^a   Arisawa, Yukiyasu ^a   Uno, Taiga ^a   Kamo, Takashi ^a   Matsunaga, Kentaro ^a   Kawamura, Daisuke ^a   Tanaka, Toshihiko ^a   Tanaka, Hiroyuki ^a   Saito, Shuichi ^a   Mori, Ichiro ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

CD accuracy; correction; device fabrication; dual damascene; EUV1; EUVL; interconnect; overlay

Indexed keywords

ACCURACY CORRECTION; BACK END OF LINES; BARRIER METALS; CD BIAS; CD VARIATION; CRITICAL DIMENSION CONTROL; DEVICE FABRICATIONS; DUAL DAMASCENE; DUAL DAMASCENE INTERCONNECTS; ELECTRICAL TESTS; FEATURE SIZES; KEY FACTORS; LITHOGRAPHY PROCESS; LOGIC NODES; LOW-K FILMS; OPTICAL PROXIMITY EFFECTS; OVERLAY ACCURACY; POROUS SILICA; RESIST PROCESS; RESIST THICKNESS; RULE BASED; SHADOWING EFFECTS; TEST CHIPS; THICK RESIST;

COPPER; DATA STORAGE EQUIPMENT; ELECTRON BEAM LITHOGRAPHY; EXTREME ULTRAVIOLET LITHOGRAPHY; OPTICAL VARIABLES MEASUREMENT; PHOTORESISTS; SILICA;

FABRICATION;

EID: 77953397175     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846325     Document Type: Conference Paper

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