Impact of mask absorber properties on printability in EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6730, Issue , 2007, Pages

  Kamo, Takashi ^a   Aoyama, Hajime ^a   Tanaka, Toshihiko ^a   Suga, Osamu ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Absorber; EUV lithography; Mask; Phase; Reflectivity; Shadowing effect

Indexed keywords

ABSORPTION; AERIAL PHOTOGRAPHY; EXTREME ULTRAVIOLET LITHOGRAPHY; IMAGE ANALYSIS; PRINTED CIRCUITS; REFLECTION;

CRITICAL DIMENSION (CD); IMAGING CONTRAST; MASK ABSORBER PROPERTIES; PRINTABILITY; SHADOWING EFFECT;

MASKS;

EID: 42149136455     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.746550     Document Type: Conference Paper

References (9)

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