Design impact study of wiring size and barrier metal on device performance toward 22 nm-node featuring EUV lithography

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Volumn , Issue , 2009, Pages 14-16

  Nakamura, N ^a   Takigawa, Y ^a   Soda, E ^a   Hosoi, N ^a   Tarumi, Y ^a   Aoyama, H ^a   Tanaka, Y ^a   Kawamura, D ^a   Ogawa, S ^a   Oda, N ^a   Kondo, S ^a   Mori, I ^a   Saito, S ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

13.5 NM; BARRIER FILMS; BARRIER METALS; DESIGN IMPACT; DEVICE PERFORMANCE; EFFECTIVE RESISTIVITY; EUV LITHOGRAPHY; GRAIN SIZE; SPEED DISTRIBUTIONS;

ULTRAVIOLET DEVICES;

TANTALUM;

EID: 70349452272     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2009.5090328     Document Type: Conference Paper

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