Feasibility study of 70nm pitch Cu/porous low-k D/D integration featuring EUV lithography toward 22nm generation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Nakamura, N ^a   Oda, N ^a   Soda, E ^a   Hosoi, N ^a   Gawase, A ^a   Aoyama, H ^a   Tanaka, Y ^a   Kawamura, D ^a   Chikaki, S ^a   Shiohara, M ^a   Tarumi, N ^a   Kondo, S ^a   Mori, I ^a   Saito, S ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER METALS; CIRCUIT DESIGNS; DUAL DAMASCENE INTERCONNECTS; ELECTROMIGRATION RELIABILITY; EUV LITHOGRAPHY; FEASIBILITY STUDIES; LOW RESISTIVITY; POROUS SILICA; WIRING CAPACITANCE;

DECISION MAKING; ELECTRON DEVICES; EXTREME ULTRAVIOLET LITHOGRAPHY; PLANNING; RESOURCE ALLOCATION; SILICA;

ULTRAVIOLET DEVICES;

EID: 77952342643     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424271     Document Type: Conference Paper

References (8)

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3. S. Ogawa et al., "Amorphous Ru / polycrystalline Ru highly reliable stacked layer barrier technology", IEEE IITC, 5.6 (2008) pp 102-104.
4. N. Oda et al, "Comprehensive study of 32 nm node ultralow-k/Cu (keff=2.6) dual damascene integration featuring short TAT silylated Porous Silica (k=2.1)", IEDM Tech. Dig., 26.6 (2008) pp. 615-618.
5. I. Mori et al, "Selete's EUV program: progress and challenges", Proc. of SPIE Vol. 6921, 692102-1-12 (2008).
6. E. Soda et al., "Reduction effect of line edge roughness on time-dependent dielectric breakdown lifetime of Cu/low-k interconnects by using CF3I etching", J. Vacuum Science and Technology, B 27(2), Mar./Apr. (2009) pp. 649-653.
7. H. Aoyama et al., "Flare impact and correction for critical dimension control with full-field exposure tool" Jpn. J. Appl. Phys., 48 (2009) 056510.
8. S. Chikaki et al., "Packaging characteristics of 6-layer Ultra Low-k/Cu dual damascene interconnect featuring advanced Scalable Porous Silica (k=2.1)", IEEE IITC, 7.10 (2009) pp 110- 112.