Flare evaluation for 32-nm half pitch using SFET

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6921, Issue , 2008, Pages

  Aoyama, Hajime ^a   Tanaka, Yuusuke ^a   Kamo, Takashi ^a   Iriki, Nobuyuki ^a   Arisawa, Yukiyasu ^a   Tanaka, Toshihiko ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

32 nm half pitch node; EUVL; Flare; Gaussian function; Point spread function; Resist blur; Rigorous simulation

Indexed keywords

32-NM HALF-PITCH NODE; FLARE; GAUSSIAN FUNCTIONS; POINT-SPREAD FUNCTION; RESIST BLUR; RIGOROUS SIMULATION;

EXPOSURE METERS; OPTICAL TRANSFER FUNCTION; OPTICS; POWER SPECTRAL DENSITY; SPECTRAL DENSITY; TECHNOLOGY; THREE DIMENSIONAL;

FUNCTION EVALUATION;

EID: 45549102787     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.771857     Document Type: Conference Paper

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