Process development for EUV mask production

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6349 I, Issue , 2006, Pages

  Abe, Tsukasa ^a   Fujii, Akiko ^a   Sasaki, Shiho ^a   Mohri, Hiroshi ^a   Hayashi, Naoya ^a   Shoki, Tsutomu ^b   Yamada, Takeyuki ^b   Nozawa, Osamu ^b   Ohkubo, Ryo ^b   Ushida, Masao ^b  

^a DAI NIPPON PRINTING CO LTD   (Japan)

^b HOYA CORPORATION   (Japan)

Author keywords

Blank; EUV lithography; Inspection; Mask; Repair

Indexed keywords

CHROMIUM COMPOUNDS; DRY ETCHING; OPTICAL VARIABLES CONTROL; PHOTOLITHOGRAPHY; REFLECTION; SEMICONDUCTOR DEVICE MANUFACTURE; TANTALUM COMPOUNDS;

CARBON FLUORIDE; CHROMIUM NITRIDE; CRITICAL DIMENSION (CD); TANTALUM BORON NITRIDE;

MASKS;

EID: 33846581528     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.692519     Document Type: Conference Paper

References (3)

1. T. Shoki et al, "Process development of 6-in EUV mask with TaBN absorber," Proceedings of SPIE, Vol.4754, pp.857-864, 2002.
2. G.Zhang et al, "EUV Mask Process Development and Integration" Proceedings of SPIE, Vol. 6283, 62830G, 2006.
3. T. Abe et al, "EUV mask development status at ASET and DNP" Proceedings of SPIE, Vol. 6283, 62830H, 2006