Reduction effect of line edge roughness on time-dependent dielectric breakdown lifetime of Cu/low-k interconnects by using CF3I etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 2, 2009, Pages 649-653

  Soda, Eiichi ^a,b   Oda, Noriaki ^a   Ito, Sanae ^a   Kondo, Seiichi ^a   Saito, Shuichi ^a   Samukawa, Seiji ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL GAS; CU-INTERCONNECTS; CU/LOW-K INTERCONNECTS; ELECTRICAL PERFORMANCE; ETCHING SELECTIVITIES; LINE EDGE ROUGHNESS; MAXIMUM ELECTRIC FIELDS; MULTI LAYERS; ON TIME; REDUCTION EFFECTS; SPIN-ON GLASS; TDDB LIFETIMES; TIME-DEPENDENT DIELECTRIC BREAKDOWNS;

ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC WIRING; ETCHING; OPTICAL INTERCONNECTS; PHOTORESISTORS; PHOTORESISTS; SPIN GLASS;

ROUGHNESS MEASUREMENT;

EID: 64549095617     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3100268     Document Type: Article

References (12)

1. F. Chen, 46th International Reliability Physics Symposium, 2008 (unpublished), pp. 132-137.
2. E. Soda, S. Kondo, S. Saito, Y. Ichihashi, A. Sato, H. Ohtake, and S. Samukawa, J. Vac. Sci. Technol. A 26, 875 (2008).
3. L. G. Christphorou and J. K. Olthoff, J. Phys. Chem. Ref. Data 29, 553 (2000).
4. S. Samukawa and K. Tsuda, Jpn. J. Appl. Phys., Part 2 37, L1095 (1998).
5. S. Samukawa, T. Mukai, and K. Tsuda, J. Vac. Sci. Technol. A 17, 2551 (1999).
6. S. Samukawa and T. Mukai, J. Vac. Sci. Technol. B 18, 166 (2000).
7. T. Hayashi, Y. Morikawa, K. Suu, and Michio Ishikawa, J. Vac. Sci. Technol. B 26, 1775 (2008)
8. IPCC Fourth Assessment Report, pp. 33-34 (2007).
9. S. Solomon, J. B. Burkholder, A. R. Ravishankara, and R. R. Garcia, J. Geophys. Res. 99, 20929 (1994).
10. N. Nagasaki, Y. Morikuni, K. Kawada, and S. Arai, Catal. Today 88, 121 (2004).
11. N. Nagasaki and H. Mimura, Catalysis Society of Japan 49, 14 (2007) (in Japanese).
12. T. Wada and N. Kotani, IEICE Trans. Electron. E82-C, 839 (1999).