Effects of mask absorber thickness on printability in EUV lithography with high resolution resist

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Kamo, Takashi ^a   Aoyama, Hajime ^a   Tanaka, Toshihiko ^a   Suga, Osamu ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Absorber; EUV lithography; Mask; Phase; Reflectivity; Resist; Shadowing effect

Indexed keywords

CADMIUM; CADMIUM COMPOUNDS; COMPUTER NETWORKS; CRACK DETECTION; ELECTRIC REACTORS; MASKS; OPTICS; PHOTOACOUSTIC EFFECT; PHOTORESISTS; TECHNOLOGY; ULTRAVIOLET DEVICES;

ABSORBER THICKNESS; CHIP PRODUCTION; EUV LITHOGRAPHY (EUVL); EXPOSURE LATITUDE (EL); FIELD EXPOSURE; HIGH RESOLUTIONS; IMAGING CONTRAST; IN ORDER; LIGHT SHIELDING; LITHOGRAPHY SIMULATIONS; MASK ABSORBER; MASK TECHNOLOGY; NEXT-GENERATION LITHOGRAPHY (NGL); OPTIMUM THICKNESS; PHOTO MASKING; RESIST BLUR; RESIST PATTERNING; SHADOWING EFFECTS; TABN ABSORBER;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 45549087680     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793069     Document Type: Conference Paper

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