Large area uniformity of plasma grown hydrogenated nanocrystalline silicon and its application in TFTs

Journal of Non-Crystalline Solids

Volumn 356, Issue 23-24, 2010, Pages 1102-1108

  Anutgan, Tamila Aliyeva ^a   Anutgan, Mustafa ^a   Atilgan, Ismail ^a   Katircioglu, Bayram ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

hydrogenated nanocrystalline silicon films; large area uniformity; RF power density; thin film transistor; Urbach tail

Indexed keywords

CHANNEL LAYERS; CRYSTALLINE VOLUME FRACTION; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL STABILITY; FILM CHARACTERIZATIONS; FILM PROPERTIES; FILM STRUCTURE; FOURIER TRANSFORM INFRARED; GATE THIN FILMS; HIGH UNIFORMITY; HYDROGEN CONTENTS; HYDROGENATED NANOCRYSTALLINE SILICON; HYDROGENATED NANOCRYSTALLINE SILICON (NC-SI:H); LARGE AREA UNIFORMITY; NANO-CRYSTALLINE STRUCTURES; NANOCRYSTALLINES; NC-SI:H; OPTICAL AND ELECTRICAL PROPERTIES; POWER DENSITIES; RF-POWER; URBACH TAIL; UV VISIBLE SPECTROSCOPY;

AMORPHOUS FILMS; DEPOSITION; ELECTRIC PROPERTIES; FILM GROWTH; FOURIER TRANSFORMS; HYDROGENATION; INFRARED SPECTROSCOPY; METALLIC FILMS; OPTICAL PROPERTIES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; ULTRAVIOLET SPECTROSCOPY; VAPOR DEPOSITION; WAVELET TRANSFORMS; X RAY DIFFRACTION;

NANOCRYSTALLINE SILICON;

EID: 77953290642     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2010.04.012     Document Type: Article

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