Nanocrystalline silicon films deposited with a modulated hydrogen dilution ratio by catalytic CVD at 200 °C

Current Applied Physics

Volumn 9, Issue 2 SUPPL., 2009, Pages

  Kim, Tae Hwan ^a   Lee, Kyoung Min ^a   Hwang, Jae dam ^a   Hong, Wan Shick ^a  

^a University of Seoul   (South Korea)

Author keywords

As deposited nanocrystalline silicon; Catalytic CVD (HWCVD); Incubation layer; Low temperature

Indexed keywords

AS-DEPOSITED NANOCRYSTALLINE SILICON; CATALYTIC CHEMICAL VAPOR DEPOSITION; CATALYTIC CVD; CATALYTIC CVD (HWCVD); CRYSTALLINITY; ELECTRONIC DEVICE; HIGH THROUGHPUT; HYDROGEN DILUTION; HYDROGEN DILUTION RATIO; INCUBATION LAYER; LOW-TEMPERATURE; NANOCRYSTALLINE SILICON FILMS; SI FILMS; SOURCE GAS;

HYDROGEN; NANOCRYSTALLINE SILICON; SEMICONDUCTING SILICON COMPOUNDS; THICK FILMS; THIN FILM TRANSISTORS;

CHEMICAL VAPOR DEPOSITION;

EID: 67349248062     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2008.12.041     Document Type: Article

References (10)

1. Lee C.H., Sazonov A., and Nathan A. Appl. Phys. Lett. 86 (2005) 222106
2. Estrada M., Cerdeira A., Resendiz L., Iniguez B., Marzal L.F., and Pallares J. Microelectron. Reliab. 45 (2005) 1161
3. Filonovich S.A., Ribeiro M., Rolo A.G., and Alpuim P. Thin Solid Films 516 (2008) 576
4. Heya A., Izumi A., Masuda A., and Matsumura H. Jpn. J. Appl. Phys. 39 (2000) 3888
5. Han S.M., Kim S.J., Park J.H., Choi S.H., and Han M.K. J. Non-Cryst. Solids 354 (2008) 2268
6. Cho H.J., Hong W.S., Lee S.H., Kim T.H., Lee K.M., Park K.B., Jung J.S., and Kwon J.Y. Jpn. J. Appl. Phys. 46 (2007) L1228
7. T.H. Kim, K.M. Lee, W.S. Hong, in: Proc. of the Fourth International TFT Conference, Seoul, Korea, 2008, p. 83.
8. Komoda M., Kamesaki K., Masuda A., and Matsumura H. Thin Solid Films 395 (2001) 198
9. Matsuda A. Thin Solid Films 337 (1999) 1
10. Jadkar S.R., Sali J.V., Takwale M.G., Musale D.V., and Kshirsagar S.T. Thin Solid Films 395 (2001) 206