Bulk and interface charge in low temperature silicon nitride for thin film transistors on plastic substrates

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 6, 2004, Pages 2256-2260

  Park, Kie Jin ^a   Parsons, Gregory N ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BON RATIO; INFRARED ABSORPTION; INTERFACE CHARGE; SURFACE CHARGE DENSITY;

ABSORPTION; CHEMICAL BONDS; DEPOSITION; ELECTRIC CHARGE; INFRARED RADIATION; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MIXTURES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; SUBSTRATES; SYNTHESIS (CHEMICAL); THERMAL EFFECTS;

THIN FILM TRANSISTORS;

EID: 10344264441     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1795822     Document Type: Article

References (12)

1. P. G. LeComber, W. E. Spear, and A. Gaith, Electron. Lett. 15, 179 1 (1979).
2. C. S. McCormick, C. E. Weber, J. R. Abelson, and S. M. Gates, Appl. Phys. Lett. 70, 226 (1997).
3. J. B. Choi, D. C. Yun, Y. I. Park, and J. H. Kim, J. Non-Cryst. Solids 266-269, 1315 (2000).
4. M. Stewart, R. S. Howell, L. Pires, and M. K. Halalis, IEEE Trans. Electron Devices 48, 845 (2001).
5. P. M. Smith, P. G. Carey, and T. W. Sigmon, Appl. Phys. Lett. 70, 342 (1997).
6. N. D. Young, G. Harkin, R. M. Bunn, D. J. McCulloch, R. W. Wilks, and A. G. Knapp, IEEE Trans. Electron Devices 18, 19 (1997).
7. A. Sazonov and A. Nathan, J. Vac. Sci. Technol. A 18, 780 (2000).
8. C.-S. Yang, L. L. Smith, C. B. Arthur, and G. N. Parsons, J. Vac. Sci. Technol. B 18, 683 (2000).
9. M. J. Powell, Appl. Phys. Lett. 43, 597 (1983).
10. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed. (Wiley, New York, 1998), pp. 509 and 561.
11. D. L. Smith, A. S. Alimonda, C. C. Chen, S. E. Ready, and B. Wacker, J. Electrochem. Soc. 137, 614 (1990).
12. K. Hiranaka, T. Yoshimura, and T. Yamaguchi, Fujitsu Sci. Tech. J. 23, 154 (1987).