Low temperature fast growth of nanocrystalline silicon films by rf-PECVD from SiH4/H2 gases: Microstructural characterization

Journal of Physics D: Applied Physics

Volumn 41, Issue 19, 2008, Pages

  Chen, Cheng Zhao ^a   Qiu, Sheng Hua ^a   Liu, Cui Qing ^a   Wu, Yan Dan ^a   Li, Ping ^a   Yu, Chu Ying ^b   Lin, Xuan Ying ^a,b  

^a HANSHAN NORMAL UNIVERSITY   (China)

^b SHANTOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THICK FILMS;

FAST GROWTH; HIGH RATES; HYDROGENATED NANOCRYSTALLINE SILICON; LOW TEMPERATURE; NANOCRYSTALLINE SILICON FILMS; RF-PECVD;

NANOCRYSTALLINE SILICON;

EID: 53349177090     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/19/195413     Document Type: Article

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