메뉴 건너뛰기




Volumn 54, Issue 1, 2007, Pages 45-51

Stability of nc-Si:H TFTs with silicon nitride gate dielectric

Author keywords

Active matrix organic light emitting diode (AMOLED) display; Amorphous silicon nitride (a SiNx:H) gate dielectric; Nanocrystalline silicon (nc Si:H); Thin film transistor (TFT); Threshold voltage (VT)stability

Indexed keywords

DIELECTRIC MATERIALS; FABRICATION; GATES (TRANSISTOR); LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

EID: 33846074305     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.887220     Document Type: Article
Times cited : (37)

References (22)
  • 1
    • 20844453706 scopus 로고    scopus 로고
    • "High-mobility nanocrystalline silicon thin-film transistor fabricated by plasma-enhanced chemical vapor deposition"
    • May
    • C.-H. Lee, A. Sazonov, and A. Nathan, "High-mobility nanocrystalline silicon thin-film transistor fabricated by plasma-enhanced chemical vapor deposition," Appl. Phys. Lett., vol. 86, no. 22, p. 222 106, May 2005.
    • (2005) Appl. Phys. Lett. , vol.86 , Issue.22
    • Lee, C.-H.1    Sazonov, A.2    Nathan, A.3
  • 3
    • 0043093719 scopus 로고    scopus 로고
    • "Thin-film transistors on plastic and glass substrates using silicon deposited by microwave plasma ECR-CVD"
    • Jun
    • L. Teng and W. A. Anderson, "Thin-film transistors on plastic and glass substrates using silicon deposited by microwave plasma ECR-CVD," IEEE Electron Device Lett., vol. 24, no. 6, pp. 399-401, Jun. 2003.
    • (2003) IEEE Electron Device Lett. , vol.24 , Issue.6 , pp. 399-401
    • Teng, L.1    Anderson, W.A.2
  • 4
    • 26444532298 scopus 로고    scopus 로고
    • "Top-gate TFTs using 13.56 MHz PECVD microcrystalline silicon"
    • Sep
    • C.-H. Lee, D. Striakhilev, S. Tao, and A. Nathan, "Top-gate TFTs using 13.56 MHz PECVD microcrystalline silicon," IEEE Electron Device Lett., vol. 26, no. 9, pp. 637-639, Sep. 2005.
    • (2005) IEEE Electron Device Lett. , vol.26 , Issue.9 , pp. 637-639
    • Lee, C.-H.1    Striakhilev, D.2    Tao, S.3    Nathan, A.4
  • 5
    • 0000505794 scopus 로고    scopus 로고
    • "Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique"
    • Dec
    • P. Roca i Cabarrocas, R. Brenot, P. Bulkin, R. Vanderhaghen, B. Drévillon, and I. French, "Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique," J. Appl. Phys., vol. 86, no. 12, pp. 7079-7082, Dec. 1999.
    • (1999) J. Appl. Phys. , vol.86 , Issue.12 , pp. 7079-7082
    • Roca i Cabarrocas, P.1    Brenot, R.2    Bulkin, P.3    Vanderhaghen, R.4    Drévillon, B.5    French, I.6
  • 6
    • 6344246216 scopus 로고    scopus 로고
    • "Amorphous/microcrystalline silicon thin film transistor characteristics for large size OLED driving"
    • T. Tsujimura, "Amorphous/microcrystalline silicon thin film transistor characteristics for large size OLED driving," Jpn. J. Appl. Phys., vol. 43, no. 8A, pp. 5122-5128, 2004.
    • (2004) Jpn. J. Appl. Phys. , vol.43 , Issue.8 A , pp. 5122-5128
    • Tsujimura, T.1
  • 7
    • 0032677689 scopus 로고    scopus 로고
    • "Plasma processing in the fabrication of amorphous silicon thin-film transistor arrays"
    • Y. Kuo, K. Okajima, and M. Takeichi, "Plasma processing in the fabrication of amorphous silicon thin-film transistor arrays," IBM J. Res. Develop., vol. 43, no. 1/2, pp. 73-88, 1999.
    • (1999) IBM J. Res. Develop. , vol.43 , Issue.1-2 , pp. 73-88
    • Kuo, Y.1    Okajima, K.2    Takeichi, M.3
  • 8
    • 3142683921 scopus 로고    scopus 로고
    • + hydrogenated microcrystalline silicon and its application in thin film transistors"
    • May
    • + hydrogenated microcrystalline silicon and its application in thin film transistors," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 22, no. 3, pp. 991-995, May 2004.
    • (2004) J. Vac. Sci. Technol. A, Vac. Surf. Films , vol.22 , Issue.3 , pp. 991-995
    • Lee, C.-H.1    Striakhilev, D.2    Nathan, A.3
  • 9
    • 0029520888 scopus 로고
    • "A totally wet etch fabrication technology for amorphous silicon thin film transistors"
    • A. M. Miri and S. G. Chamberlain, "A totally wet etch fabrication technology for amorphous silicon thin film transistors," in Proc. Mater. Res. Soc. Symp., 1995, vol. 377, pp. 737-742.
    • (1995) Proc. Mater. Res. Soc. Symp. , vol.377 , pp. 737-742
    • Miri, A.M.1    Chamberlain, S.G.2
  • 10
    • 3142723955 scopus 로고
    • "Interaction between n-type amorphous hydrogenated silicon films and metal electrodes"
    • May
    • S. Ishihara, T. Hirao, K. Mori, M. Kitagawa, M. Ohno, and S. Kohiki, "Interaction between n-type amorphous hydrogenated silicon films and metal electrodes," J. Appl. Phys., vol. 53, no. 5, pp. 3909-3911, May 1982.
    • (1982) J. Appl. Phys. , vol.53 , Issue.5 , pp. 3909-3911
    • Ishihara, S.1    Hirao, T.2    Mori, K.3    Kitagawa, M.4    Ohno, M.5    Kohiki, S.6
  • 13
    • 0032065188 scopus 로고    scopus 로고
    • "Hydrogenated amorphous and polycrystalline silicon TFTs by hot-wire CVD"
    • 230
    • H. Meiling, A. M. Brockhoff, J. K. Rath, and R. E. I. Schropp, "Hydrogenated amorphous and polycrystalline silicon TFTs by hot-wire CVD," J. Non-Cryst. Solids, vol. 277-230, pt. 2, pp. 1202-1206, 1998.
    • (1998) J. Non-Cryst. Solids , vol.277 , Issue.PART 2 , pp. 1202-1206
    • Meiling, H.1    Brockhoff, A.M.2    Rath, J.K.3    Schropp, R.E.I.4
  • 15
    • 84897690897 scopus 로고    scopus 로고
    • "Density of deep bandgap states in amorphous silicon from the temperature dependence of thin film transistor current"
    • T. Globus, H. C. Slade, M. Shur, and A. Hack, "Density of deep bandgap states in amorphous silicon from the temperature dependence of thin film transistor current," in Proc. Mater. Res. Soc. Symp., 1997, vol. 336, pp. 823-828.
    • (1997) Proc. Mater. Res. Soc. Symp. , vol.336 , pp. 823-828
    • Globus, T.1    Slade, H.C.2    Shur, M.3    Hack, A.4
  • 16
    • 0036540908 scopus 로고    scopus 로고
    • "Defects in silicon oxynitride gate dielectric films"
    • Apr
    • H. Wong and V. A. Gritsenko, "Defects in silicon oxynitride gate dielectric films," Microelectron. Reliab., vol. 42, no. 4, pp. 597-605, Apr. 2002.
    • (2002) Microelectron. Reliab. , vol.42 , Issue.4 , pp. 597-605
    • Wong, H.1    Gritsenko, V.A.2
  • 17
    • 0026818616 scopus 로고
    • "Conduction mechanism of leakage current observed in metal-oxide-semiconductor transistors and poly-Si thin film transistors"
    • Feb
    • M. Yazaki, S. Takenaka, and H. Ohshima, "Conduction mechanism of leakage current observed in metal-oxide-semiconductor transistors and poly-Si thin film transistors," Jpn. J. Appl. Phys., vol. 31, no. 2A, pp. 206-209, Feb. 1992.
    • (1992) Jpn. J. Appl. Phys. , vol.31 , Issue.2 A , pp. 206-209
    • Yazaki, M.1    Takenaka, S.2    Ohshima, H.3
  • 18
    • 0034431057 scopus 로고    scopus 로고
    • "Physically-based SPICE model for the leakage current accounting for its dependencies on process, geometrical and bias conditions"
    • P. Servati, A. Nathan, and A. Sazonov, "Physically-based SPICE model for the leakage current accounting for its dependencies on process, geometrical and bias conditions," in Proc. Mater. Res. Soc. Symp., 2000, vol. 609, pp. A.28.3.1-A.28.3.6.
    • (2000) Proc. Mater. Res. Soc. Symp. , vol.609
    • Servati, P.1    Nathan, A.2    Sazonov, A.3
  • 19
    • 0024888643 scopus 로고
    • "The physics of amorphous-silicon thin-film transistors"
    • Dec
    • M. J. Powell, "The physics of amorphous-silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 36, no. 12, pp. 2753-2763, Dec. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , Issue.12 , pp. 2753-2763
    • Powell, M.J.1
  • 20
    • 0000212153 scopus 로고    scopus 로고
    • "Dangling-bond defect state creation in microcrystalline silicon thin-film transistors"
    • R. B. Wehrspohn, M. J. Powell, S. C. Deane, I. D. French, and P. Roca i Cabarrocas, "Dangling-bond defect state creation in microcrystalline silicon thin-film transistors," Appl. Phys. Lett., vol. 77, pp. 750-753, 2000.
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 750-753
    • Wehrspohn, R.B.1    Powell, M.J.2    Deane, S.C.3    French, I.D.4    Roca i Cabarrocas, P.5
  • 22
    • 1942488244 scopus 로고    scopus 로고
    • "Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs"
    • Apr
    • K. S. Karim, A. Nathan, M. Hack, and W. I. Milne, "Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs," IEEE Electron Device Lett., vol. 25, no. 4, pp. 188-190, Apr. 2004.
    • (2004) IEEE Electron Device Lett. , vol.25 , Issue.4 , pp. 188-190
    • Karim, K.S.1    Nathan, A.2    Hack, M.3    Milne, W.I.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.