Stability of nc-Si:H TFTs with silicon nitride gate dielectric

IEEE Transactions on Electron Devices

Volumn 54, Issue 1, 2007, Pages 45-51

  Lee, Czang Ho ^a,b   Striakhilev, Denis ^a   Nathan, Arokia ^a,c  

^a UNIVERSITY OF WATERLOO   (Canada)

^b SAMSUNG Electronics   (South Korea)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Active matrix organic light emitting diode (AMOLED) display; Amorphous silicon nitride (a SiNx:H) gate dielectric; Nanocrystalline silicon (nc Si:H); Thin film transistor (TFT); Threshold voltage (VT)stability

Indexed keywords

DIELECTRIC MATERIALS; FABRICATION; GATES (TRANSISTOR); LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

ACTIVE-MATRIX ORGANIC LIGHT-EMITTING DIODE DISPLAY; AMORPHOUS-SILICON NITRIDE; GATE DIELECTRIC; NANOCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 33846074305     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.887220     Document Type: Article

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