Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure

Vacuum

Volumn 83, Issue 10, 2009, Pages 1253-1256

  Filonovich, S A ^a   Aguas H ^a,b   Bernacka Wojcik, I ^b   Gaspar, C ^a   Vilarigues, M ^a   Silva, L B ^a,b   Fortunato, E ^a,b   Martins, R ^a,b  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^b Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

Author keywords

Doping; nc Si:H; PECVD; Structural properties; Trimethylboron

Indexed keywords

AMORPHOUS AND NANOCRYSTALLINE SILICON; BORON-DOPED; DARK CONDUCTIVITY; DEPOSITION CONDITIONS; DEPOSITION PARAMETERS; DEPOSITION PRESSURES; DOPING; FILM GROWTH MECHANISM; HIGH CRYSTALLINITY; HIGH PRESSURE; LOW SUBSTRATE TEMPERATURE; NANO-CRYSTALLINE SILICON THIN FILMS; NANOCRYSTALLINE SILICON FILMS; NC-SI:H; P-TYPE; PECVD; PLASMA POWER; RF-PECVD; STRUCTURAL AND OPTICAL PROPERTIES; SUBSURFACE LAYER; TRIMETHYLBORON; WINDOW LAYER;

AMORPHOUS FILMS; BORON; CONDUCTIVE FILMS; DOPING (ADDITIVES); FILM GROWTH; METALLIC FILMS; METALLIC GLASS; NANOCRYSTALLINE SILICON; OPTICAL PROPERTIES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON SOLAR CELLS; SOLAR ENERGY;

AMORPHOUS SILICON;

EID: 67349209304     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.03.017     Document Type: Article

References (24)

1. Hu Z.H., Liao X.B., Diao H.W., Cai Y., Zhang S.B., Fortunato E., et al. Journal of Non-Crystalline Solids 352 (2006) 1900-1903
2. See also. Martins R., Baptista P., Raniero L., Doria G., Silva L., Franco R., et al. Applied Physics Letters 90 (2007) 023903-023905
3. Rath J.K., and Schropp R.E.I. Solar Energy Materials and Solar Cells 53 (1998) 189-203
4. Filonovich S.A., Alpuim P., Rebouta L., Bouree, and Soro Y.M. Journal of Non-Crystalline Solids 354 (2008) 2376-2380
5. Matsui T., Kondo M., and Matsuda A. Journal of Non-Crystalline Solids 338-340 (2004) 646-650
6. Lee H.J., Sazonov A., and Nathan A. Materials Research Society Symposium Proceedings 989 (2007) 503-508
7. Cabarrocas P.i., Kumar S., and Drévillon B. Journal of Applied Physics 66 (1989) 3286
8. Lloret A., Wu Z.Y., Theye M.L., El Zawawi I., Siefert J.M., and Equer B. Applied Physics A 55 (1992) 573-581
9. Blanchard W.R., Gernhardt R.C., Kugel H.W., and LaMarche P.H. 19th IEEE/NPSS Symposium on Fusion Engineering, Proceedings (2002) 226-229
10. Perrin J., Takeda Y., Hirano N., Takeuchi Y., and Matsuda A. Surface Science 210 (1989) 114
11. Eser E., Hegedus S.S., and Buchanan W.A. AIP Conference Proceedings 462 (1999) 254-259
12. Reference spectra are supplied by Jobin Yvon software. Origin of the references:. In: Palik E.D. (Ed). Handbook of optical constants of solids (1998), Elsevier
13. Aspnes D.E., and Studna A.A. Physical Review B 27 (1983) 985
14. Jellison G.E., and Modine M.F. Applied Physics Letters 69 (1996) 371
15. Kaneko T., Wakagi M., Onisawa K., and Minemura T. Applied Physics Letters 64 (1994) 1865
16. Ledinský M., Fekete L., Stuchlík J., Mates T., Fejfar A., and Kočka J. Journal of Non-Crystalline Solids 352 (2006) 1209
17. Zhang S., Liao X., Xu Y., Martins R., Fortunato E., and Kong G. Journal of Non-Crystalline Solids 338 (2004) 188-191
18. Kondo M., Nasuno Y., Mase H., Wada T., and Matsuda A. Journal of Non-Crystalline Solids 299-302 (2002) 108-112
19. Alpuim P., Chu V., and Conde J.P. Journal of Vacuum Science & Technology A 21 (2003) 1048
20. Cabarrocas P.i., Morral A.i., Lebib S., and Poissant Y. Pure and Applied Chemistry 74 (2002) 359
21. Otobe M., and Oda S. Japanese Journal of Applied Physics 31 (1992) L-1388
22. Yamasaki S., Das U.K., and Yasuda T. Journal of Non-Crystalline Solids 185 (2002) 299-302
23. Cabarrocas P.i., Morral A.i., Kalache B., and Kasouit S. Solid State Phenomena 93 (2003) 257-268
24. Zhang S., Liao X., Raniero L., Fortunato E., Xu Y., Kong G., et al. Solar Energy Materials and Solar Cells 90 (2006) 3001-3008